摘要
通过研究应力前后GaAsPHEMT器件电特性的测量 ,分析了GaAsPHEMT退化的原因 ,从实验中得出高场下碰撞电离的电离率与器件沟道电场峰值的关系曲线 .对高场下碰撞电离率的实验曲线进行拟合 ,可以得到碰撞电离率与器件沟道电场峰值的量化关系 ,由此可以对GaAsPHEMT器件的电性能和可靠性进行改善和评估 .进一步改进GaAsPHEMT的击穿电压 。
This paper analyzes the degradation in GaAs pseudomorphic high electron mobitity transistors (PHEMT's) by measuring the electric characteristics in GaAs PHEMT's before and after stress. The relation between impact ionization rate and maximum channel electric field is gained. An analytical expression of impact ionization rate versus maximum channel electric field is deduced by fitting the experimental results. The electric characteristic and reliability in GaAs PHEMT's can be improved and evaluated using the analytical expression. The impact. ionization in channel should be decreased in order to improve the breakdown voltage in GaAs PHEMT's.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2003年第10期2576-2579,共4页
Acta Physica Sinica
基金
国家自然科学基金 (批准号 :6 0 2 0 6 0 0 6 )
国防预研基金 (批准号 :0 0J8.4 .3DZ0 1)资助的课题~~
