摘要
本文介绍了能隙电压源温度曲率校正的概念与原理,设计了一个CMOS工艺的高温校正的电流模式的能隙电压源.本电路采用温度补偿,从而使设计得到了简化.采用2μ mp阱CMOS工艺模型模拟分析可以发现该参考源在温度0℃～100℃范围内能够有较好的温度特性.
In high performance bandgap reference design,curva-ture-corrected circuit always be used. This paper introduces the curvature-correct conception and principle and gives a simply CMOS curvature-corrected current bandgap reference. Compared to the traditional bandgap reference, simulating with a 2μ m pwell CMOS model we can get a quite well high-temperature character of the bandgap voltage reference in 0℃~100℃.
出处
《微电子学与计算机》
CSCD
北大核心
2003年第10期38-40,共3页
Microelectronics & Computer
