摘要
报道了用金属锌有机源和二氧化碳混合气源等离子体增强化学气相沉积 (PECVD)的方法成功地制备高质量择优取向 (0 0 0 2 )的ZnO薄膜。通过X ray衍射谱进行了结构分析得到六方结构 ,择优取向 ,晶粒尺寸大约在 2 2 0nm。并通过原子力显微镜分析更进一步验证了晶粒的尺寸。通过透射谱分析观察到了典型的激子吸收线。这种方法的特点是可以在低温条件下在任何衬底上生长大面积均匀性好。
High quality ZnO thin films were prepared by plasma enhanced chemical vapor deposition from the metal organic and carbon dioxide mixture gas sources.The wurtzite structure of ZnO thin films with a strong c axis orientation was successfully grown on the (001)Si substrate.The structure and composition were characterized by using X ray diffraction and atomic force microscope(AFM)image.A type excition absorption line of ZnO was observed from optical transmission spectra.This method has a promise advantage in preparing high quality ZnO thin film.
出处
《发光学报》
EI
CAS
CSCD
北大核心
2000年第4期383-384,共2页
Chinese Journal of Luminescence
基金
中国科学院百人计划项目(ZJ00Y18D)
国家自然科学基金重大项目资助(No.69977019)
