3AUSTON D H. Picosescond optoelectronic switching and gating in silicon[J]. Appl Phys Lett, 1975,26 (3) : 101-103.
4ZHAO Y W, LUO Y L, FUNG S. Influence of Fe doping concentration on some properties of semi-insulating InP[J].Chinese Journal of Semiconductor ,2002,23(10) : 1041-1045.
5ISLAM N E, SCHAMILOGLU E, FLEDDERMANN C B.Analysis of high voltage operation of gallium arsenide photoconductive switches used in high power applications[J]. J Appl Phys, 1999,86(5) : 1754-1758.
6ZHAO H M, HADIZAD P, HUR J H, et al. Avalanche injection model for the lock-on effect in Ⅲ-Ⅴ power photoconductive switches[J].J Appl Phys, 1993,73 ( 44 ) :1807-1812.
7LEE C H. Picosecond optoelectronic devices[M]. Orlando:Academic Press, 1984:73-116.
