摘要
对等离子增强化学气相沉积技术(PECVD)低温制备的非晶硅(a Si)薄膜的电导率随B掺杂浓度的变化规律进行了研究。结果表明:当B2H6/SiH4由0.6%增加到0.8%时,a Si薄膜的暗电导率由10-5(Ω·cm)-1急剧增加到10-1(Ω·cm)-1;进一步增加B2H6/SiH4时,暗电导率增加缓慢;当B2H6/SiH4大于1.0%时,暗电导率急剧下降。对B2H6/SiH4为1.0%及1.2%的P层材料制备的太阳电池的研究结果表明:采用B2H6/SiH4为1.2%的光电转换效率优于1.0%。
The conductivity of amorphous silicon (a-Si) film prepared by the plasma enhanced chemical vapor deposition (PECVD) has been investigated at low temperature. The experimental results show that with increasing B2H6/SiH4 from 0.6% to 0.8%, the conductivity of the a-Si films has a great increase from 10-5 to 10-1 (Ω·cm)-1. However, with the further increasing B2H6/SiH4 from 1.0%, the one has a fast decrease. Two solar cells have been made from a-Si film as p-layer whose B2H6/SiH4 are 1.0% and 1.2%, respectively. The result shows that the photovoltaic efficiency of the latter, is prior to the other.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2003年第11期1146-1148,共3页
Journal of Optoelectronics·Laser
基金
国家"863"计划资助项目(2002AA715081)
国家"973"计划资助项目(ZM200202A01)
