摘要
对不同的本底真空条件下 ,采用甚高频等离子体增强化学气相沉积技术沉积的氢化微晶硅 (μc_Si∶H)薄膜中的氧污染问题进行了比较研究 .对不同氧污染条件下制备的薄膜样品的x射线光电子能谱与傅里叶变换红外吸收光谱测量结果表明 :μc_Si∶H薄膜中 ,氧以Si—O ,O—O和O—H三种不同的键合模式存在 ,不同的键合模式源自不同的物理机理 .μc_Si∶H薄膜的Raman光谱、电导率与激活能的测量结果进一步显示 :沉积过程中氧污染程度的不同 ,对 μc_Si∶H薄膜的结构特性与电学特性产生显著影响 ;而不同氧污染对 μc_Si∶H薄膜电学特性的影响不同于氢化非晶硅 (a_Si:H)薄膜 .
Investigations on the oxygen contamination in the μc-Si∶H thin films deposited by very-high-frequency plasma-enhanced chemical-vapor deposition(VHF-PECVD) technique with and without load lock chamber have been reported in this paper. From the results of x-ray photoelectron spectroscopy and Fourier transform infrared absorption measurements, it can be identified that oxygen exists in μc-Si∶H film with different bonding modes, namely Si-O bonding, O-H bonding and O-O bonding. In addition, the influences of oxygen on the structural and electrical properties of the films are studied with Raman spectra, conductivity(σ) and activation energy (E a) measurements. The results reveal that structural properties of the μc-Si∶H film depend strongly on the bonding modes of the existing oxygen. The electrical properties show that the role of oxygen in μc-Si∶H films is different from those in a-Si∶H and the essential mechanism needs to be further explored.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2003年第11期2865-2869,共5页
Acta Physica Sinica
基金
国家重点基础研究发展规划项目 (批准号 :G2 0 0 0 0 2 82 0 2和G2 0 0 0 0 2 82 0 3 )
国家高技术研究发展计划 (批准号 :2 0 0 2AA3 0 3 2 60 )资助的课题~~
