摘要
采用离子束溅射方法制备了正巨磁电阻多层膜,在制备过程中采用外加磁场和退火处理。在室温条件下多层膜的巨磁电阻效应达到200%～300%,并用磁矩取向的双电流导电模型对正磁电阻的机理进行了解释。
A series of giant positive magnetoresistance of magnetic multilayer structure were fabricated by ion-beam sputtering in high vacuum with applied magnetic field and treatment. The positive magnetoresistance values were 280%. The theory of positive magnetoresistance can be explained by model of double-current conductor of oriented magnetron.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2003年第6期652-653,659,共3页
Journal of Functional Materials
基金
国家自然科学基金资助项目(19890310[4])
南京师范大学材料科学实验室资助项目(20135020)
关键词
磁性多层膜
正巨磁电阻
离子束溅射
制备
磁场
退火
Annealing
Electromagnetic fields
Ion beam assisted deposition
Multilayers
Sputter deposition
