摘要
用X射线双晶衍射方法测定了自组织生长的InAs GaAs量子点的摇摆曲线 ,根据Takagi Taupin方程对曲线进行了拟合。在考虑量子点层晶格失配的情况下 ,理论曲线和实验曲线符合得很好 ,从而确定了量子点垂直样品表面的失配度 ,约为 4～ 6 % ,这与宏观连续体弹性理论的预测相近。结合电镜。
Rocking curves of self-organized dots InAs/GaAs are measured using double crystal x-ray diffraction. The composition, strain and thickness of InAs quantum dot layer are obtained by theoretical simulations of the rocking curves based on the Takagi-taupin equations of dynamical diffraction theory. To obtain agreement between theory and experiment, submonolayer deposited InAs quantum dots should be consided as chemical compound InGaAs, not as superlattice of InAs/GaAs when simulations are performed. The vertical lattice mismatch of the InAs QDs layer with respect to GaAs is around 5～6% which is agreeable to macroscopic continuum elasticity, while the lattice mismatch in the QW is very samll. It is explained that the simulation results are rational with reference to atomic force microscopy and transmission electron microscopy images.
出处
《材料科学与工程学报》
CAS
CSCD
北大核心
2003年第6期862-864,共3页
Journal of Materials Science and Engineering
基金
安徽省科技厅年度重点资助项目 (0 1 0 4 1 1 88)
安徽省教育厅自然科学基金资助项目(2 0 0 0j1 0 0 2)
