摘要
论述了一种注入或者吸附在材料中的氚和氘的深度分布的测量方法.样品为氚(钛)靶和氘(钛)靶.用2MeV入射质子束,T(p,n)反应研究氚的深度分布;用1MeV入射氘束,D(d,n)反应研究氘的深度分布.用标准的飞行时间方法测量中子能谱。由中子能量确定起反应的质子或氘核的能量。进而得出氚或者氘在钛层中的深度分布.本方法的灵敏度可达0.1at.％.对氚(钛)靶,当靶厚为5mg/cm^2时,深度分辩好于0.5mg/cm^2.
Measurements of the depth profile of tritium and deuterium implanted or adsorbed into materials are discussed in this paper. The samples were TiT and TiD targets. Tritium depth profiling with a 2 MeV incident proton beam by use of the T(p, n) reaction was studied; deuterium depth profiling with 1 MeV incident deutercn team by use cf the D(d, n) reaction was also studied. The neutron energy spectra were measured, using standard pulsed-beam time-of-flight methods. The energy of the reacting proten or deuteron was determined from the neutron energy. Thus, the depth and the depth profile of the tritium or deuterium in titanium layers were determined. Sensitivity of 0.1 at. % can be obtained, when the target thickness is 5 mg/cm2, the depth resolution is better than 0.5mg/cm2 for the TiT target.
出处
《四川大学学报（自然科学版）》
CAS
CSCD
1992年第1期104-108,共5页
Journal of Sichuan University(Natural Science Edition)
关键词
中子飞行时间
氚
氘
深度分布
neutron time-of-flight, tritium, deuterium, depth profiling.
