摘要
采用微波等离子化学气相沉积(MW-PCVD)制备金刚石/碳化硅复合梯度膜.工作气体为H2,CH4和Si[CH3]4(四甲基硅烷,TMS),其中H2∶CH4=100∶0.6,Si[CH3]4为0％-O.05％,沉积压力为3300Pa,基体温度为700℃,微波功率为700W.基体为单晶硅,在沉积前用纳米金刚石颗粒处理.沉积后的样品经扫描电子显微镜(SEM),电子探针显微分析(EPMA),X射线能量损失分析(EDX)表明:沉积膜中的碳化硅含量是随Si[CH3]4流量的变化而改变.通过改变Si[CH3]4的流量可以制备金刚石/碳化硅复合梯度膜,且梯度膜中金刚石与复合膜过渡自然平滑.
Diamond/SiC compositional gradient films were deposited by the microwave plasma CVD, using a gas mixture of hydrogen, methane and tetramethylsilane (TMS). Single crystalline silicon wafers, pretreated with nano-diamond particles before deposition, were used as substrates. The films were characterized by scanning electron microscopy (SEM), electron probe microanalysis (EPMA) and energy-dispersive x-ray analysis (EDX). The results show that the content of diamond and silicon carbide in the films changes with TMS flow rates, and diamond/silicon carbide films with gradient composition and smooth transition can be obtained by adjusting the TMS flow rate during deposition process.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
2004年第1期253-256,共4页
Journal of Inorganic Materials
基金
山东省自然科学基金(Y2001F10)
