摘要
在硅衬底上形成高阻隔离层对于提高硅基射频电路的性能具有重要意义。采用多孔硅厚膜作为隔离层 ,能够极大地降低衬底高频损耗。本文对n+型硅衬底上选择性多孔硅厚膜的制备进行了研究。通过在阳极氧化反应中采用不同的HF溶液的浓度、电流密度和反应时间来控制多孔硅的膜厚、孔隙度等特性。有效地减少了多孔硅的龟裂失效 ,得到的多孔硅最大膜厚为 72 μm。
The performance of Si RF circuits can be improved by insulating Si substrate with high resistance layers. Using thick porous silicon layers can reduce the high frequency loss in Si substrate. Selective thick layers of porous silicon formation on N + substrate is researched. Porous silicon layers of different thickness and porosities are obtained using anodization method via controlling the hydrofluoric acid concentration, current density and time. The cracking of porous silicon was effectively decreased. The maximal thickness of porous silicon layers is 72μm. The formation velocity and surface morphology are measured.
出处
《微纳电子技术》
CAS
2003年第7期101-103,共3页
Micronanoelectronic Technology
基金
国家 973计划 (G19990 3 3 10 5 )的资助项目
