摘要
为开发适合制备ZGO靶材的超细β-Ga2O3纳米粉末,以金属镓、硝酸、盐酸、氨水为原料,对化学沉淀法制备纳米氧化镓粉末的过程进行了研究。通过严格控制实验条件制备出了单斜相、粒度分布均匀的β-Ga2O3纳米粉末,并以其为原料制备了可直流磁控溅射的超高密度GZO陶瓷靶材。
In order to develop a kind of Ga2O3 nano-particles used for ZGO ceramic target, Ga2O3 nano-particles was prepared by chemical precipitation method using gallium, nitric acid, hydrochloric acid, ammonia as raw materials. Monoclinic β-Ga2O3 nano-particles with narrow distribution were synthesized by controlling the experimental conditions strictly, meanwhile the ultrahigh density GZO(ZnO:3 wt%β-Ga2O3)ceramic target for DC magnetron sputtering was prepared using those particles as raw material.
出处
《中国陶瓷》
CAS
CSCD
北大核心
2014年第10期20-24,共5页
China Ceramics
基金
国家自然科学基金(51372093)
