摘要
氮化铝(AlN)陶瓷具有良好的热性能、电性能、机械性能和化学稳定性,是现今较为理想的基板材料和电子封装材料。AlN陶瓷的优良性能与原材料粉体的性能有着直接的关系,高性能AlN粉体是制备高热导率AlN陶瓷的关键。本文综述了高性能AlN粉体的制备技术与发展现状,比较了国内外AlN粉体的发展差距,指出了国内下一步需要努力的方向。
Aluminum nitride(AlN)ceramics are ideal substrates and electronic packaging materials nowadays due to their excellent thermal property,electrical property,mechanical property and chemical stability.The properties of AlN ceramic are based on the raw material powders,and high quality AlN powder is the key to obtain high quality AlN ceramic.This paper overviews the synthesis technology and current status of high qulity AlN powders,compares the development disparity at home and abroad,and points out the direction of the next step.
出处
《真空电子技术》
2015年第5期14-18,共5页
Vacuum Electronics
关键词
ALN
粉体
制备方法
基板材料
Aluminum nitride,Powder,Synthesis method,Substrate material
