摘要
采用熔盐脉冲电沉积方法在纯铌表面制备出渗硅层,对渗层的组织、成分及物相进行了检测,并对渗硅过程中硅的扩散行为进行研究。结果表明,渗硅层晶粒细小,无明显裂纹,均匀整齐,与基体结合紧密。渗硅层由单相Nb Si2组成。渗硅层厚度与沉积时间成抛物线关系,根据二者关系式计算出不同沉积温度下硅的扩散系数,并拟合得出脉冲电沉积时硅在铌基体中的扩散激活能为162 k J/mol。
The siliconized layer was prepared on pure niobium surface by molten salt pulse electrodeposition.The microstructure,composition and phase of the siliconized layer were studied.The results show that the siliconized layer is uniform without holes,which is closely combined with the matrix.The siliconized layer consists of single-phase Nb Si2.The siliconized layer′s thickness has a parabolic relationship with deposition time.According to the relationship between layer's thickness and deposition time,the diffusion coefficients of silicon at different deposition temperatures were calculated,and the diffusion activation energy of silicon in niobium matrix obtained by fitting data is 162 k J/mol.
出处
《铸造技术》
CAS
北大核心
2016年第7期1384-1387,共4页
Foundry Technology
基金
河北省自然科学基金资助项目(E2014209275)
关键词
铌
熔盐脉冲电沉积
渗硅
扩散系数
扩散激活能
niobium
molten salt pulse electrodeposition
siliconizing
diffusion coefficient
diffusion activation energy
