摘要
本文采用提拉法生长BGO单晶和Bi:BGO单晶,测试晶体相位共轭反射率和响应时间,发现Bi:BGO晶体相位共轭反射率比BGO晶体提高了一倍。研究了Bi:BGO晶体相位共轭反射率与外电场的关系,以及Bi:BGO晶体的光折变机理。
In this paper, BGO and Bi:BGO crystals have been grown using CZ method. The reflectivities and response times of phase conjugation have been measured. The reflectivity of Bi:BGO is found to be two tirries of that of BGO crystal. The relation between reflectivity and applied electric field, and the mechanism of photorefraction of BirBGO are studied.
出处
《压电与声光》
CSCD
北大核心
1992年第6期44-47,共4页
Piezoelectrics & Acoustooptics
基金
国家自然科学基金资助项目
关键词
单晶
相位共轭
光折变
锗酸铋晶体
BGO crystal, Bi
BGO crystal, conjugation, photorefractive mechanism
