摘要
系统研究了硅各向异性腐蚀对偏压的依赖及重掺杂的影响,建立了液一半接触能带模型和界面电荷传递模型,提出了反应注入概念且指出腐蚀速度通常依赖于界面态的填充情况,合理解释了实验得到的蚀速-偏压关系.考虑到非平衡载流子复合后,得到与实验吻合的蚀速比-载流子浓度公式.
In this paper, the dependence of anisotropic silicon etching on bias-voltage and the influence of heavy doping are studied in detail. Two models of liquid-semiconductor contact energy band and transport of interface changes are set up. The concept of reaction implantation is put forward. Meanwhile, it is considered that the etching rate usually depends on the filling conditions of the interface state. The relations of experimental etching rate and bias-voltage are explained correctly. Finally, after considering the recombination of disequilibrium carriers, the etching rate carrier concentration formula is found to be in good agreement with experimental data.
出处
《应用科学学报》
CAS
CSCD
1992年第2期167-173,共7页
Journal of Applied Sciences
关键词
各向异性
腐蚀
偏压
重掺杂
anisotropio silicon etching, liquid-semiconduotor contact, reaction implanbation, interface state filling.
