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掺杂比与热处理温度对锑锡氧化物结构和导电性能的影响 被引量:3

Effects of Doping Ratio and Calcinations on Structure and Electrical Conductivity of Antimony Doped Tin Oxide
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摘要 采用水热法制备锑锡氧化物(ATO)粉体,运用差热–热重分析(DTA-TGA)、X射线衍射(XRD)等测试手段对粉体进行了表征。研究了掺杂比、热处理温度等工艺条件对ATO粉体结构和导电性能的影响。实验结果显示:粉体仍为四方相的金红石结构;锑锡掺杂比(摩尔比)为11%时达到最佳导电性能,随掺杂量增加,粉体晶粒度变小;随热处理温度升高,电阻值降低,粉体晶粒度变大。 antimony doped tin oxide was prepared by hydrothermal synthesis. Characteristics of the powder were investigated by DTA-TGA and XRD. The effects of doping ratio and heat treatment temperature on the structure and the electrical conductivity of ATO powder were studied. The results indicate that the powders have a tetragonal SnO2 phase; the optimal doping ratio is 11%; and the crystallite size decreases with the increase of antimony content; the resistance decreases and the crystallite size increases with the increase of heat treatment temperature.
出处 《电子元件与材料》 CAS CSCD 北大核心 2004年第3期43-44,48,共3页 Electronic Components And Materials
基金 科技型中小企业技术创新基金项目(00C26213310610)
关键词 锑锡氧化物 水热合成 掺杂比 热处理温度 晶粒粒度 导电性能 antimony doped tin oxide hydrothermal synthesis doping ratio heat treatment temperature crystallite size electrical conductivity
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