摘要
高温高压温差法生长优质宝石级金刚石单晶要求严格控制晶体的生长速度 ,因为晶体生长速度过快会导致熔体金属来不及扩散从而在晶体中产生包裹体 ,影响晶体的质量。本文考察了低速生长条件下宝石级金刚石单晶的生长情况 ,结果发现 ,在以 {10 0 }面作为晶种的生长面的情况下 ,无论合成温度高低 ,低速生长 (本文中为 0 .40mg/h)出的晶体中均不存在金属包裹体 ,这与日本住友公司早期的结果有所不同。
For the growth of high quality large diamond crystals by temperature gradient method (TGM) under high pressure and high temperature (HPHT), a slow and controlled growing process is necessary to avoid the forming of metal inclusions in the growing diamond crystals. In this paper, the crystal growing characteristics under a lower growth rate are investigated. It is found that, when growing gem diamond at a low growth rate (in our work, the growth rate is 0.38mg/h), and with the {100} seed surface as the growing surface, there would be no forming of metal inclusion in grown diamonds in spite of the influence of the synthesis temperature. This conclusion is different from the earlier conclusion made by of Sumitomo Electric Corporation in Japan.
出处
《金刚石与磨料磨具工程》
CAS
2004年第2期14-16,共3页
Diamond & Abrasives Engineering
基金
国家自然科学基金项目
50 1 72 0 1 8
教育部高等学校骨干教师资助计划项目
