摘要
通过对850nm氧化限制型垂直腔面发射激光器(VCSEL)结构的研究,研制出了满足实用要求的高性能的850nm氧化限制型VCSEL.激光器12μm和16μm氧化孔径25℃的阈值电流分别为1.2mA和1.8mA,斜效率为0.58mW/mA,微分串联电阻为35Ω和25Ω,激光器具有良好的温度特性和可靠性,可应用于1.25Gbit/s数据通信.
The 850 nm oxide confined VCSEL structure was studied and the high performance 850 nm oxide confined VCSEL were fabricated. The threshold currents of the 12 μm and 16 μm aperture are respectively 1.2 mA and 1.8 mA at 25 ℃. The slope efficiency is 0.58 mW/mA. The resistances are respectively 35 Ω and 25 Ω. The devices show good temperature characteristics and reliability. It can be used as the 1.25 Gbit/s data communication source.
出处
《光通信研究》
北大核心
2004年第2期36-38,58,共4页
Study on Optical Communications
