摘要
本文用低温光致发光(LTPL)技术对经中子辐照的N型6H-SiC在350℃-1650℃温度范围的退火行为进行了研究。在700℃退火后观察到D1中心(D1-center)和位于485.0nm、493.6nm处的发光中心。我们发现D1中心与深能级瞬态谱(DLTS)的E1/E2深能级对具有不同的退火行为,这否定了它们源于相同的辐照诱生缺陷的观点。D1中心可能源于由空位和反位组成的复合体。
In this article, low temperature photoluminescence (LTPL) measurements have been performed on neutron irradiated and post-annealed n-type 6H-SiC, the annealing temperature was from 350℃ to 1650℃. D_1-center defect and two luminescence center which light at (485.0nm) and 493.6nm were observed after annealing above 700℃. These thermal behaviors of the D_1-center are different from the E_1/E_2 in deep-level transient spectroscopy (DLTS) spectra, which argues against the identification that D_1-center and E_1/E_2 originate from the same defect. We relate D_1-center to the complexes of vacancies and antisites.
出处
《光散射学报》
2004年第1期66-69,共4页
The Journal of Light Scattering
基金
国家自然科学基金(60076010)资助
