摘要
The growth process of low-temperaturs plasma-nitriding layer was investigated by scan-ning electron microscopy (SEM) and X-ray diffraction (XRD). The layer is composedof expanded fcc phase (γN), whose lattice parameter of the layer increases with processtime resulting from increasing the nitrogen content. The layer hardness increases grad-ually with nitrogen content. The high slip band density on the layer surface observedin situ by SEM shows that the surface yield occurs when supersaturated nitrogen con-tent in the layer attains to some value, which is also responsible for the increase inlayer hardness.
The growth process of low-temperaturs plasma-nitriding layer was investigated by scan-ning electron microscopy (SEM) and X-ray diffraction (XRD). The layer is composedof expanded fcc phase (γN), whose lattice parameter of the layer increases with processtime resulting from increasing the nitrogen content. The layer hardness increases grad-ually with nitrogen content. The high slip band density on the layer surface observedin situ by SEM shows that the surface yield occurs when supersaturated nitrogen con-tent in the layer attains to some value, which is also responsible for the increase inlayer hardness.
