摘要
采用ZYGOMarkⅢ GPI数字波面干涉仪对电子束蒸发方法制备的ZrO2 薄膜中的残余应力进行了研究 ,讨论了沉积温度、沉积速率等工艺参量对ZrO2 薄膜残余应力的影响。实验结果表明 :随着沉积温度及沉积速率的升高 ,ZrO2 薄膜中残余应力状态由张应力变为压应力 ,且压应力值随着沉积温度升高而增大。同时用X射线衍射技术测量分析了不同沉积条件下ZrO2 薄膜的微结构组织 ,探讨了ZrO2
The residual stress in ZrO 2 films prepared by electron beam evaporation was measured by viewing the substrate deflection using an optical interference method. The influence of deposition temperatures and deposition rates on the residual stress was studied. The results show that residual stress in ZrO 2 films changes from tensile to compressive with the increase of deposition temperature and deposition rate and the value of the compressive stress increase with the increase of deposition temperature. At the same time, the microstructure of the ZrO 2 films was inspected by X-ray diffraction (XRD). The relationship between the residual stress and the microstructure was also discussed.
出处
《光学学报》
EI
CAS
CSCD
北大核心
2004年第4期437-441,共5页
Acta Optica Sinica
