摘要
在Al2 O3 陶瓷基片上以正硅酸乙酯 (TEOS)为原料 ,高纯氮气作载气 ,采用低压冷壁式设备和化学气相沉积(CVD)方法制备SiO2 薄膜 ,研究了基片温度、TEOS温度和沉积时间对SiO2 薄膜沉积速率的影响 .采用XRD ,XPS和SEM技术对SiO2
The preparations of SiO_2 thin films on the ceramic substrates of Al_2O_3 using cold-wall reactor and chemical vapour deposition (CVD) of Si(OC_2H_5)_4 have been developed. The effects of substrate temperature, TEOS temperature and time of deposition upon film deposition rate are discussed. The composition and the microstructure of SiO_2 films have been investigated by XRD,XPS and SEM.
出处
《西南师范大学学报（自然科学版）》
CAS
CSCD
北大核心
2004年第2期251-254,共4页
Journal of Southwest China Normal University(Natural Science Edition)
基金
重庆市科委攻关项目 ( 99-5 663 ) .
