摘要
本文提出了一个为SIMOX SOI结构的硅膜和二氧化硅埋层厚度解析模型,适用于0.7—2.0 ×10^(18)cm^(-2)剂量范围和50—300keV能量范围,模型与实验测量在大剂量和低能量情况下仍附合较好。本模型对SIMOX工艺优化设计和发展VLSI TCAD具有参考价值,同时给出了在常规氧注入能量(如150keV)下用增大剂量方法制备TF SOI结构的理论依据。
An analytical model of silicon top layer and buried oxide layer thicknesses for SIMOXSOI structure is developed. It covers the dose range of 0. 7-2.0×10^(18)cm^(-2) and the energyrange of 50-300keV. The calculated results of this model are compared to experiments andIRIS simulation.Good agreement with experiments is obtained. Based on this model, themethod of forming SOI structure with silicon overlayer of 1000A thickness or less by increasingthe dose in the usual energy range of 150-200keV is proposed.
