摘要
采用直流磁控反应溅射在Si(1 0 0 )衬底上溅射得到 (0 0 1 )取向的V2 O5薄膜 .x射线衍射 (XRD)、扫描电镜 (SEM)和傅里叶变换红外光谱 (FTIR)的结果表明 ,氧分压影响薄膜的成分和生长取向 ,在氧分压 0 4Pa时溅射得到 (0 0 1 )取向的纳米V2 O5薄膜 ,即沿c轴垂直衬底方向取向生长的薄膜 .V2 O5薄膜经过真空退火得到 (0 0 1 )取向的VO2 薄膜 ,晶体颗粒长大 .对薄膜的分子结构和退火过程的晶格转换进行了分析 。
V 2O 5 thin films with a preferred orientation were deposited on Si(100) substrate by reactive dc magnetron sputtering. The surface morphology and structural features were studied by XRD, SEM and FTIR to ensure the growth of V 2O 5 films. These investigations revealed that the chemical composition and the orientation of the films were affected by the oxygen partial pressure. Nano grain V 2O 5 films can be grown with a layered structure at oxygen partial pressure of 0 4Pa. V 2O 5 film could be converted to (001) oriented VO 2 film after vacuum annealing process.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2004年第6期1956-1960,共5页
Acta Physica Sinica
基金
国家自然科学基金 (批准号 :1992 70 0 1)资助的课题~~
