摘要
Three-electrode plasma jet system consisting of a perforated dielectric tube with two outer and one floating inner electrodes was developed and employed for nano-coating processes of Si [1 0 0] wafer. Lowered gas breakdown voltage, increasing plasma density and increased discharge current were achieved by using the floating inner electrode. The low temperature (Nonthermal) Atmospheric Pressure Plasma protective coating technique using precursor-containing gases (Ar, O2 and OMCTS mixture) which injected into Plasma Jet (APPJ), there are several techniques are introduced here to avoid substrate damage including increasing plasma density without increasing the kinetic energy of the ion bombardment. Furthermore some few precautions are given here to insure good media for silicon wafer prepared for coating.
Three-electrode plasma jet system consisting of a perforated dielectric tube with two outer and one floating inner electrodes was developed and employed for nano-coating processes of Si [1 0 0] wafer. Lowered gas breakdown voltage, increasing plasma density and increased discharge current were achieved by using the floating inner electrode. The low temperature (Nonthermal) Atmospheric Pressure Plasma protective coating technique using precursor-containing gases (Ar, O2 and OMCTS mixture) which injected into Plasma Jet (APPJ), there are several techniques are introduced here to avoid substrate damage including increasing plasma density without increasing the kinetic energy of the ion bombardment. Furthermore some few precautions are given here to insure good media for silicon wafer prepared for coating.
