利用分子束外延方法制备了应用于四结光伏电池的1.05 eV InGaAsP薄膜,并对其超快光学特性进行了研究.温度和激发功率有关的发光特性表明:InGaAsP材料以自由激子发光为主.室温下InGaAsP材料的载流子发光弛豫时间达到10.4 ns,且随激发功...利用分子束外延方法制备了应用于四结光伏电池的1.05 eV InGaAsP薄膜,并对其超快光学特性进行了研究.温度和激发功率有关的发光特性表明:InGaAsP材料以自由激子发光为主.室温下InGaAsP材料的载流子发光弛豫时间达到10.4 ns,且随激发功率增大而增大.发光弛豫时间随温度升高呈现S形变化,在低于50 K时随温度升高而增大,在50-150 K之间时减小,而温度高于150 K时再次增大.基于载流子弛豫动力学,分析并解释了温度及非辐射复合中心浓度对样品材料载流子发光弛豫时间S形变化的影响.展开更多
The application of transparent conducting indium-tin-oxide （ITO） film as full front electrode replacing the conven- tional bus-bar metal electrode in III-V compound GalnP solar cell was proposed. A high-quality, non...The application of transparent conducting indium-tin-oxide （ITO） film as full front electrode replacing the conven- tional bus-bar metal electrode in III-V compound GalnP solar cell was proposed. A high-quality, non-rectifying contact between ITO and 10 nm N＋-GaAs contact layer was formed, which is benefiting from a high carrier concentration of the terrilium-doped N＋-GaAs layer, up to 2×10^19 cm^-3. A good device performance of the GalnP solar cell with the ITO electrode was observed. This result indicates a great potential of transparent conducting films in the future fabrication of larger area flexible III-V solar cell.展开更多
InGaAs电池具有吸收带隙低,效率高,稳定性好的优点,广泛应用于热光伏(TPV)器件.本文从材料生长,器件制造和系统综合方面研究了InP衬底上0.73 eV In_(0.53)Ga_(0.47)As晶格匹配和0.6 eV In_(0.68)Ga_(0.32)As晶格失配热光伏电池.通过缓...InGaAs电池具有吸收带隙低,效率高,稳定性好的优点,广泛应用于热光伏(TPV)器件.本文从材料生长,器件制造和系统综合方面研究了InP衬底上0.73 eV In_(0.53)Ga_(0.47)As晶格匹配和0.6 eV In_(0.68)Ga_(0.32)As晶格失配热光伏电池.通过缓冲层厚度计算,分析了组分波浪上升式InAsP结构的应力弛豫机制,单层缓冲层厚度150 nm时能够释放84%的失配应力.晶格匹配In_(0.53)Ga_(0.47)As和晶格失配In_(0.68)Ga_(0.32)As室温光致发光波长分别为1.69和2.05μm.在AM1.5G标准光谱下, 0.73和0.6 eV InGaAs TPV电池的转换效率分别为12.38%和8.41%.然而在1323 K辐射温度下, 0.6 eV InGaAs TPV电池的转换效率超过0.7 eV InGaAs TPV电池,利用黑体辐射公式标定后转换效率分别达到26.9%和25.4%.搭建了热光伏原理样机系统,通过InGaAs热光伏电池串并联方式,实现了1470 K辐射温度下5 W的输出功率,完成了热辐射能到电能的稳定转换.展开更多
We report the recent result of GaAs/GalnP dual-junction solar cells grown by all solid-state molecularbeam-epitaxy （MBE）. The device structure consists of a GaIn0.4sP homojunction grown epitaxially upon a GaAs homoj...We report the recent result of GaAs/GalnP dual-junction solar cells grown by all solid-state molecularbeam-epitaxy （MBE）. The device structure consists of a GaIn0.4sP homojunction grown epitaxially upon a GaAs homojunction, with an interconnected GaAs tunnel junction. A photovoltaic conversion efficiency of 27% under the AM1.5 globe light intensity is realized for a GaAs/GaInP dual-junction solar cell, while the efficiencies of 26% and 16.6% are reached for a GaAs bottom cell and a GaInP top cell, respectively. The energy loss mechanism of our GaAs/GalnP tandem dual-junction solar cells is discussed. It is demonstrated that the MBE-grown phosphide-containing Ⅲ-V compound semiconductor solar cell is very promising for achieving high energy conversion efficiency.展开更多
We report the specific contact resistance for ITO with both metal and a semiconductor. Good quality ITO was deposited by electron beam evaporation with the resistivity of 2.32×10^-4 Ω.cm and an averaged transmit...We report the specific contact resistance for ITO with both metal and a semiconductor. Good quality ITO was deposited by electron beam evaporation with the resistivity of 2.32×10^-4 Ω.cm and an averaged transmittance of 92.8% in the visible light region. The circular transmission line model （c-TLM） method was used to evaluate and compare the properties of the ITO/metal and ITO/semiconductor ohmic contacts. The lowest specific contact resistance of the ITO/Ni is 2.81×10^-6 Ω.cm^2, while that oflTO/n-GaAs is 7×10^-5Ω.cm^2. This is the best ohmic contact between ITO and n-GaAs ever reported. These results suggest that good quality ITO has strong potential to be used to realize highly efficient solar cells.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61534008,61376081,and 61404157)the Application Foundation of Suzhou,China(Grant No.SYG201437)
文摘The application of transparent conducting indium-tin-oxide （ITO） film as full front electrode replacing the conven- tional bus-bar metal electrode in III-V compound GalnP solar cell was proposed. A high-quality, non-rectifying contact between ITO and 10 nm N＋-GaAs contact layer was formed, which is benefiting from a high carrier concentration of the terrilium-doped N＋-GaAs layer, up to 2×10^19 cm^-3. A good device performance of the GalnP solar cell with the ITO electrode was observed. This result indicates a great potential of transparent conducting films in the future fabrication of larger area flexible III-V solar cell.
文摘InGaAs电池具有吸收带隙低,效率高,稳定性好的优点,广泛应用于热光伏(TPV)器件.本文从材料生长,器件制造和系统综合方面研究了InP衬底上0.73 eV In_(0.53)Ga_(0.47)As晶格匹配和0.6 eV In_(0.68)Ga_(0.32)As晶格失配热光伏电池.通过缓冲层厚度计算,分析了组分波浪上升式InAsP结构的应力弛豫机制,单层缓冲层厚度150 nm时能够释放84%的失配应力.晶格匹配In_(0.53)Ga_(0.47)As和晶格失配In_(0.68)Ga_(0.32)As室温光致发光波长分别为1.69和2.05μm.在AM1.5G标准光谱下, 0.73和0.6 eV InGaAs TPV电池的转换效率分别为12.38%和8.41%.然而在1323 K辐射温度下, 0.6 eV InGaAs TPV电池的转换效率超过0.7 eV InGaAs TPV电池,利用黑体辐射公式标定后转换效率分别达到26.9%和25.4%.搭建了热光伏原理样机系统,通过InGaAs热光伏电池串并联方式,实现了1470 K辐射温度下5 W的输出功率,完成了热辐射能到电能的稳定转换.
基金supported by the National Natural Science Foundation of China(No.61176128)the SINANO-SONY Joint Program,China(No.Y1AAQ11002)
文摘We report the recent result of GaAs/GalnP dual-junction solar cells grown by all solid-state molecularbeam-epitaxy （MBE）. The device structure consists of a GaIn0.4sP homojunction grown epitaxially upon a GaAs homojunction, with an interconnected GaAs tunnel junction. A photovoltaic conversion efficiency of 27% under the AM1.5 globe light intensity is realized for a GaAs/GaInP dual-junction solar cell, while the efficiencies of 26% and 16.6% are reached for a GaAs bottom cell and a GaInP top cell, respectively. The energy loss mechanism of our GaAs/GalnP tandem dual-junction solar cells is discussed. It is demonstrated that the MBE-grown phosphide-containing Ⅲ-V compound semiconductor solar cell is very promising for achieving high energy conversion efficiency.
基金Project supported by the National Natural Science Foundation(Nos.61176128,61376081)the Knowledge Innovation Project of the CAS(No.Y2BAQ11001)the SINANO SONY Joint Program(Nos.Y1AAQ11002,Y2AAQ11004)
文摘We report the specific contact resistance for ITO with both metal and a semiconductor. Good quality ITO was deposited by electron beam evaporation with the resistivity of 2.32×10^-4 Ω.cm and an averaged transmittance of 92.8% in the visible light region. The circular transmission line model （c-TLM） method was used to evaluate and compare the properties of the ITO/metal and ITO/semiconductor ohmic contacts. The lowest specific contact resistance of the ITO/Ni is 2.81×10^-6 Ω.cm^2, while that oflTO/n-GaAs is 7×10^-5Ω.cm^2. This is the best ohmic contact between ITO and n-GaAs ever reported. These results suggest that good quality ITO has strong potential to be used to realize highly efficient solar cells.
