Spin-orbit coupling in a gate-controlled In0.53 Ga0.47 As/InP quantum well is investigated in the presence of a large Zeeman effect. We develop a fourier-transform fitting procedure to extract the zero-field spin-spli...Spin-orbit coupling in a gate-controlled In0.53 Ga0.47 As/InP quantum well is investigated in the presence of a large Zeeman effect. We develop a fourier-transform fitting procedure to extract the zero-field spin-splitting Rashba parameter α. The bare 9 factor value is found to be of the order of 3 from magnetotransport measurements in tilted magnetic fields. It is found that both Zeeman splitting and Rashba splitting play important roles in determining the total spin splitting in In0.53Ga0.47 As.展开更多
Bi_(2)Te_(3)films are grown on(111)-oriented GaAs substrates by using the hot wall epitaxy method and the surface oxidation properties in the films are investigated by x-ray photoelectron spectroscopy,Raman spectrosco...Bi_(2)Te_(3)films are grown on(111)-oriented GaAs substrates by using the hot wall epitaxy method and the surface oxidation properties in the films are investigated by x-ray photoelectron spectroscopy,Raman spectroscopy,and x-ray diffraction.The results show that the films are c-axis oriented.Two pairs of new peaks in the XPS spectra involved with the binding energies from Bi 4f and Te 3d electrons correspond to Bi–O–Te bonds.Besides the A^(1)_(1)g,E^(2)g and A^(2)_(1)g vibration modes from Bi_(2)Te_(3)films,two new peaks at 93.5 cm^(-1)and 123 cm^(-1)are observed in Raman spectra,which are assigned toα-Bi2O_(3)and TeO_(2),respectively.Our results are helpful for analyzing the degradation mechanism of topological surface states in Bi_(2)Te_(3).展开更多
Low-field magnetotransport properties of two-dimensional electron gases(2DEGs)are investigated in Al_(0.22)Ga_(0.78)N/GaN heterostructures.By means of a tilting magnetic field,unexpected oscillations of magnetoresisti...Low-field magnetotransport properties of two-dimensional electron gases(2DEGs)are investigated in Al_(0.22)Ga_(0.78)N/GaN heterostructures.By means of a tilting magnetic field,unexpected oscillations of magnetoresistivity are observed in a weak localization region.Qualitative understanding based on Altshuler–Aronov–Spivak oscillations is proposed for the case of interface disorder in Al_(0.22)Ga_(0.78)N/GaN heterostructures.展开更多
基金Supported by Special Funds for Major State Basic Research under Project(2012CB619203,2013CB922301)National Natural Science Foundation of China(11174306,61290304)Innovation Program of Shanghai Institute of Technical Physics of the Chinese Academy of Sciences(Q-ZY-76)
基金Supported by the National Natural Science Foundation of China(11304092,51371079,11305056,11304299,51602099)the Open Foundation of Hubei Collaborative Innovation Center for High-efficiency Utilization of Solar Energy(HBSKFZD2014001,HBSKFM2014006,HBSKFM2014013,HBSKFM2014015)
基金Supported by the Special Funds for Major State Basic Research Project under Grant No 2007CB924901, the National Natural Science Foundation of China under Grant No 60221502, the Knowledge Innovation Programme of Chinese Academy of Sciences under Grant No C2-12, and Science and Technology Commission of Shanghai under Grant No 07JC14059.
文摘Spin-orbit coupling in a gate-controlled In0.53 Ga0.47 As/InP quantum well is investigated in the presence of a large Zeeman effect. We develop a fourier-transform fitting procedure to extract the zero-field spin-splitting Rashba parameter α. The bare 9 factor value is found to be of the order of 3 from magnetotransport measurements in tilted magnetic fields. It is found that both Zeeman splitting and Rashba splitting play important roles in determining the total spin splitting in In0.53Ga0.47 As.
基金Supported by the National Basic Research Program of China under Grant Nos 2012CB934300 and 2012CB619200the National Natural Science Foundation of China under Grant Nos 61290304,11074265 and 11174307the Natural Science Foundation of Shanghai(12ZR1435500).
文摘Bi_(2)Te_(3)films are grown on(111)-oriented GaAs substrates by using the hot wall epitaxy method and the surface oxidation properties in the films are investigated by x-ray photoelectron spectroscopy,Raman spectroscopy,and x-ray diffraction.The results show that the films are c-axis oriented.Two pairs of new peaks in the XPS spectra involved with the binding energies from Bi 4f and Te 3d electrons correspond to Bi–O–Te bonds.Besides the A^(1)_(1)g,E^(2)g and A^(2)_(1)g vibration modes from Bi_(2)Te_(3)films,two new peaks at 93.5 cm^(-1)and 123 cm^(-1)are observed in Raman spectra,which are assigned toα-Bi2O_(3)and TeO_(2),respectively.Our results are helpful for analyzing the degradation mechanism of topological surface states in Bi_(2)Te_(3).
基金by the National Natural Science Foundation of China under Grant Nos 60806042,10774001 and 60990313the Research Fund for the Doctoral Program of Higher Education in China(200800011021)the Wuhan National High Magnetic Field Center(WHMFCKF2011004).
文摘Low-field magnetotransport properties of two-dimensional electron gases(2DEGs)are investigated in Al_(0.22)Ga_(0.78)N/GaN heterostructures.By means of a tilting magnetic field,unexpected oscillations of magnetoresistivity are observed in a weak localization region.Qualitative understanding based on Altshuler–Aronov–Spivak oscillations is proposed for the case of interface disorder in Al_(0.22)Ga_(0.78)N/GaN heterostructures.
