We comprehensively study the co-precipitation preparation of aluminum doped zinc oxide（AZO） nanoparticles, ceramic target and thin fi lm deposition. The nanoparticles calcined below 700 ℃ possessed pure wurtzite st...We comprehensively study the co-precipitation preparation of aluminum doped zinc oxide（AZO） nanoparticles, ceramic target and thin fi lm deposition. The nanoparticles calcined below 700 ℃ possessed pure wurtzite structure of ZnO. When the calcination temperature exceeded 700 ℃, ZnAl2O4 phase appeared. The resistivity and relative density of the AZO target pressed from nanoparticles were 3×10^-3 Ω·cm and 99.1%, respectively. The minimum resistivity of AZO thin films prepared by DC sputtering of the ceramic target reached 4.1×10^-4Ω·cm with the mobility of 33 cm^2/v·s and the carrier concentration of 4.5 ×10^20 cm^-3. The average optical transmittance of the AZO thin films in the visible wavelength range（400-800 nm） was more than 80%.展开更多
基金Founded by the Natural Science Foundation of China(No.21377063)the Zhejiang Natural Science Foundation(No.LY15F040004)the Ningbo Key Laboratory of Silicon and Organic Thin Film Optoelectronic Technologies
文摘We comprehensively study the co-precipitation preparation of aluminum doped zinc oxide（AZO） nanoparticles, ceramic target and thin fi lm deposition. The nanoparticles calcined below 700 ℃ possessed pure wurtzite structure of ZnO. When the calcination temperature exceeded 700 ℃, ZnAl2O4 phase appeared. The resistivity and relative density of the AZO target pressed from nanoparticles were 3×10^-3 Ω·cm and 99.1%, respectively. The minimum resistivity of AZO thin films prepared by DC sputtering of the ceramic target reached 4.1×10^-4Ω·cm with the mobility of 33 cm^2/v·s and the carrier concentration of 4.5 ×10^20 cm^-3. The average optical transmittance of the AZO thin films in the visible wavelength range（400-800 nm） was more than 80%.
