We presented 980-nm oxide-confined vertical-cavity surface-emitting lasers （VCSELs） with a 16 -um oxide aperture. Optical power, voltage, and emission wavelength are measured in an ambient temperature range of 5 ℃-...We presented 980-nm oxide-confined vertical-cavity surface-emitting lasers （VCSELs） with a 16 -um oxide aperture. Optical power, voltage, and emission wavelength are measured in an ambient temperature range of 5 ℃-80 ℃. Measurements combined with an empirical model are used to analyse the power dissipation in the device and the physical mechanism contributing to the thermal rollover phenomenon in VCSEL. It is found that the carrier leakage induced selfheating in the active region and the Joule heating caused by the series resistance are the main sources of power dissipation. In addition, carrier leakage induced self-heating increases as the injection current increases, resulting in a rapid decrease of the internal quantum efficiency, which is a dominant contribution to the thermal rollover of the VCSEL at a larger current. Our study provides useful guidelines to design a 980-nm oxide-confined VCSEL for thermal performance enhancement.展开更多
A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well （QW） vertical-cavity surface-emitting laser （VCSEL） based on an intra-cavity contacted structure is fabricated. A threshold curre...A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well （QW） vertical-cavity surface-emitting laser （VCSEL） based on an intra-cavity contacted structure is fabricated. A threshold current of 1.5 mA for a 22 μm oxide aperture device is achieved, which corresponds to a threshold current density of 0.395 kA/cm2. The peak output optical power reaches 17.5 mW at an injection current of 30 mA at room temperature under pulsed opera- tion. While under continuous-wave （CW） operation, the maximum power attains 10.5 mW. Such a device demonstrates a high characteristic temperature of 327 K within a temperature range from -12°C to 96 °C and good reliability under a lifetime test. There is almost no decrease of the optical power when the device operates at a current of 5 mA at room temperature under the CW injection current.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60908012 and 61076148)the Foundation of Beijing Municipal Education Commission, China (Grant No. KM201010005030)
文摘We presented 980-nm oxide-confined vertical-cavity surface-emitting lasers （VCSELs） with a 16 -um oxide aperture. Optical power, voltage, and emission wavelength are measured in an ambient temperature range of 5 ℃-80 ℃. Measurements combined with an empirical model are used to analyse the power dissipation in the device and the physical mechanism contributing to the thermal rollover phenomenon in VCSEL. It is found that the carrier leakage induced selfheating in the active region and the Joule heating caused by the series resistance are the main sources of power dissipation. In addition, carrier leakage induced self-heating increases as the injection current increases, resulting in a rapid decrease of the internal quantum efficiency, which is a dominant contribution to the thermal rollover of the VCSEL at a larger current. Our study provides useful guidelines to design a 980-nm oxide-confined VCSEL for thermal performance enhancement.
基金Project supported by the National Natural Science Foundation of China (Grant Nos.60908012 and 61076148)the Foundation of Beijing Municipal Education Commission,China (Grant No.KM201010005030)
文摘A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well （QW） vertical-cavity surface-emitting laser （VCSEL） based on an intra-cavity contacted structure is fabricated. A threshold current of 1.5 mA for a 22 μm oxide aperture device is achieved, which corresponds to a threshold current density of 0.395 kA/cm2. The peak output optical power reaches 17.5 mW at an injection current of 30 mA at room temperature under pulsed opera- tion. While under continuous-wave （CW） operation, the maximum power attains 10.5 mW. Such a device demonstrates a high characteristic temperature of 327 K within a temperature range from -12°C to 96 °C and good reliability under a lifetime test. There is almost no decrease of the optical power when the device operates at a current of 5 mA at room temperature under the CW injection current.
