以紫薯渣为原料,研究其护色工艺,在单因素实验基础上研究提取花色苷的最佳工艺,在此基础上以口感、颜色、香味为指标进行饮料最佳复配实验。结果表明,最佳护色条件为0.05%的柠檬酸,花色苷的最佳提取工艺为1.0%柠檬酸与50%乙醇为提取溶剂...以紫薯渣为原料,研究其护色工艺,在单因素实验基础上研究提取花色苷的最佳工艺,在此基础上以口感、颜色、香味为指标进行饮料最佳复配实验。结果表明,最佳护色条件为0.05%的柠檬酸,花色苷的最佳提取工艺为1.0%柠檬酸与50%乙醇为提取溶剂,料液比1∶30,75℃水浴1.5 h,提取液中花色苷含量为0.170 1 g/100 m L。饮料最佳复配实验配方为:紫薯渣花色苷提取液70 m L,相对甜度为22.55的罗汉果水提液30 m L,蔗糖6 g/100 m L,其口感酸甜适宜,颜色亮紫红,具有淡淡的紫薯和罗汉果的香味,产品花色苷含量为0.219 4 g/100 m L,相对甜度为11.76。保质期实验(相当于1年)表明,保质期内饮料的色泽、口感稳定,微生物指标符合国家饮料产品卫生标准。展开更多
Multilevel phase-change memory is an attractive technology to increase storage capacity and density owing to its high-speed,scalable and non-volatile characteristics.However,the contradiction between thermal stability...Multilevel phase-change memory is an attractive technology to increase storage capacity and density owing to its high-speed,scalable and non-volatile characteristics.However,the contradiction between thermal stability and operation speed is one of key factors to restrain the development of phase-change memory.Here,N-doped Ge_(2)Sb_(2)Te_(5)-based optoelectronic hybrid memory is proposed to simultaneously implement high thermal stability and ultrafast operation speed.The picosecond laser is adopted to write/erase information based on reversible phase transition characteristics whereas the resistance is detected to perform information readout.Results show that when N content is 27.4 at.%,N-doped Ge_(2)Sb_(2)Te_(5)film possesses high ten-year data retention temperature of 175℃and low resistance drift coefficient of 0.00024 at 85℃,0.00170 at 120℃,and 0.00249 at 150℃,respectively,owing to the formation of Ge–N,Sb–N,and Te–N bonds.The SET/RESET operation speeds of the film reach 520 ps/13 ps.In parallel,the reversible switching cycle of the corresponding device is realized with the resistance ratio of three orders of magnitude.Four-level reversible resistance states induced by various crystallization degrees are also obtained together with low resistance drift coefficients.Therefore,the N-doped Ge_(2)Sb_(2)Te_(5)thin film is a promising phase-change material for ultrafast multilevel optoelectronic hybrid storage.展开更多
文摘以紫薯渣为原料,研究其护色工艺,在单因素实验基础上研究提取花色苷的最佳工艺,在此基础上以口感、颜色、香味为指标进行饮料最佳复配实验。结果表明,最佳护色条件为0.05%的柠檬酸,花色苷的最佳提取工艺为1.0%柠檬酸与50%乙醇为提取溶剂,料液比1∶30,75℃水浴1.5 h,提取液中花色苷含量为0.170 1 g/100 m L。饮料最佳复配实验配方为:紫薯渣花色苷提取液70 m L,相对甜度为22.55的罗汉果水提液30 m L,蔗糖6 g/100 m L,其口感酸甜适宜,颜色亮紫红,具有淡淡的紫薯和罗汉果的香味,产品花色苷含量为0.219 4 g/100 m L,相对甜度为11.76。保质期实验(相当于1年)表明,保质期内饮料的色泽、口感稳定,微生物指标符合国家饮料产品卫生标准。
基金Supported by National Natural Science Foundation of China(No.81000782)the Scholarship Award for Excellent Doctoral Students granted by Ministry of Education of China(No.82601003)~~
基金Project supported by the National Natural Science Foundation of China(Grant Nos.62205231 and 22002102)the Postgraduate Research&Practice Innovation Program of Jiangsu Province,China(Grant No.KYCX223271)Jiangsu Key Laboratory for Environment Functional Materials。
文摘Multilevel phase-change memory is an attractive technology to increase storage capacity and density owing to its high-speed,scalable and non-volatile characteristics.However,the contradiction between thermal stability and operation speed is one of key factors to restrain the development of phase-change memory.Here,N-doped Ge_(2)Sb_(2)Te_(5)-based optoelectronic hybrid memory is proposed to simultaneously implement high thermal stability and ultrafast operation speed.The picosecond laser is adopted to write/erase information based on reversible phase transition characteristics whereas the resistance is detected to perform information readout.Results show that when N content is 27.4 at.%,N-doped Ge_(2)Sb_(2)Te_(5)film possesses high ten-year data retention temperature of 175℃and low resistance drift coefficient of 0.00024 at 85℃,0.00170 at 120℃,and 0.00249 at 150℃,respectively,owing to the formation of Ge–N,Sb–N,and Te–N bonds.The SET/RESET operation speeds of the film reach 520 ps/13 ps.In parallel,the reversible switching cycle of the corresponding device is realized with the resistance ratio of three orders of magnitude.Four-level reversible resistance states induced by various crystallization degrees are also obtained together with low resistance drift coefficients.Therefore,the N-doped Ge_(2)Sb_(2)Te_(5)thin film is a promising phase-change material for ultrafast multilevel optoelectronic hybrid storage.
