针对传统人工测量板材尺寸精度较低、工作量大、易导致板材表面受损等局限,基于双目视觉技术设计了一种板材尺寸视觉测量系统;通过双目相机采集棋盘格图像,采用MATLAB进行相机标定和图像校正,拍摄左右图像并通过半全局立体匹配算法(SGM,...针对传统人工测量板材尺寸精度较低、工作量大、易导致板材表面受损等局限,基于双目视觉技术设计了一种板材尺寸视觉测量系统;通过双目相机采集棋盘格图像,采用MATLAB进行相机标定和图像校正,拍摄左右图像并通过半全局立体匹配算法(SGM,semi global matching)进行特征点立体匹配,重建出目标三维点云模型;为提高目标特征点坐标获取的准确性,提出基于HARRIS的亚像素检测方法;采用区域生长算法结合膨胀和腐蚀操作提取板材表面轮廓,根据三角测量原理计算出板材轮廓上各点的三维坐标从而实现板材的尺寸测量,并进行点云重建增强三维展示效果;实践结果表明亚像素检测方法在角点提取上存在优势,在实际板材测量应用中实现了高精度尺寸测量,满足了工业测量需求。展开更多
The electronic band structures of periodic models for Si-H compounds are investigated by the density functional theory.Our results show that the Si-H compound changes from indirect-gap semiconductor to direct-gap semi...The electronic band structures of periodic models for Si-H compounds are investigated by the density functional theory.Our results show that the Si-H compound changes from indirect-gap semiconductor to direct-gap semiconductor with the increase of H content.The density of states,the partial density of states and the atomic charge population are examined in detail to explore the origin of this phenomenon.It is found that the Si-Si bonds are affected by H atoms,which results in the electronic band transformation from indirect gap to direct gap.This is confirmed by the nearest neighbour semi-empirical tight-binding (TB) theory.展开更多
文摘针对传统人工测量板材尺寸精度较低、工作量大、易导致板材表面受损等局限,基于双目视觉技术设计了一种板材尺寸视觉测量系统;通过双目相机采集棋盘格图像,采用MATLAB进行相机标定和图像校正,拍摄左右图像并通过半全局立体匹配算法(SGM,semi global matching)进行特征点立体匹配,重建出目标三维点云模型;为提高目标特征点坐标获取的准确性,提出基于HARRIS的亚像素检测方法;采用区域生长算法结合膨胀和腐蚀操作提取板材表面轮廓,根据三角测量原理计算出板材轮廓上各点的三维坐标从而实现板材的尺寸测量,并进行点云重建增强三维展示效果;实践结果表明亚像素检测方法在角点提取上存在优势,在实际板材测量应用中实现了高精度尺寸测量,满足了工业测量需求。
基金supported by the National Natural Science Foundation of China (Grant No. 50775101)the New Century Excellent Talents (Grant No. NCET-04-0515)+2 种基金the Jiangsu Provincial Science and Technology Supporting Project,China (Grant No. BE2008030)Qing Lan Project (2008-04)Jiangsu University Natural Science Foundation of China (Grant No. 07KJB430023)
文摘The electronic band structures of periodic models for Si-H compounds are investigated by the density functional theory.Our results show that the Si-H compound changes from indirect-gap semiconductor to direct-gap semiconductor with the increase of H content.The density of states,the partial density of states and the atomic charge population are examined in detail to explore the origin of this phenomenon.It is found that the Si-Si bonds are affected by H atoms,which results in the electronic band transformation from indirect gap to direct gap.This is confirmed by the nearest neighbour semi-empirical tight-binding (TB) theory.
