在“双碳”战略目标及建筑节能和可再生能源利用技术快速发展背景下,太阳能光热在建筑领域的研究和应用成为热点问题。以Web of Science核心集和中国期刊网期刊全文数据库为代表,利用CiteSpace软件开展太阳能光热在建筑领域应用文献调...在“双碳”战略目标及建筑节能和可再生能源利用技术快速发展背景下,太阳能光热在建筑领域的研究和应用成为热点问题。以Web of Science核心集和中国期刊网期刊全文数据库为代表,利用CiteSpace软件开展太阳能光热在建筑领域应用文献调研整理,从文献作者国别和机构、学科以及关键词等角度综合分析,总体研判国内外研究和应用进展。结果表明,太阳能建筑光热领域研究持续处于热点,中文文献研究内容自成体系,学科与关键词间交叉不足;国内外研究发展历程与当前研究阶段存在差异,国外研究目前着重聚焦新材料等基础研发方向,国内研究重点关注系统性优化与改造。展开更多
CMOS-compatible RF/microwave devices,such as filters and amplifiers,have been widely used in wireless communication systems.However,secondary-electron emission phenomena often occur in RF/microwave devices based on si...CMOS-compatible RF/microwave devices,such as filters and amplifiers,have been widely used in wireless communication systems.However,secondary-electron emission phenomena often occur in RF/microwave devices based on silicon(Si)wafers,especially in the high-frequency range.In this paper,we have studied the major factors that influence the secondary-electron yield(SEY)in commercial Si wafers with different doping concentrations.We show that the SEY is suppressed as the doping concentration increases,corresponding to a relatively short effective escape depthλ.Meanwhile,the reduced narrow band gap is beneficial in suppressing the SEY,in which the absence of a shallow energy band below the conduction band will easily capture electrons,as revealed by first-principles calculations.Thus,the new physical mechanism combined with the effective escape depth and band gap can provide useful guidance for the design of integrated RF/microwave devices based on Si wafers.展开更多
文摘在“双碳”战略目标及建筑节能和可再生能源利用技术快速发展背景下,太阳能光热在建筑领域的研究和应用成为热点问题。以Web of Science核心集和中国期刊网期刊全文数据库为代表,利用CiteSpace软件开展太阳能光热在建筑领域应用文献调研整理,从文献作者国别和机构、学科以及关键词等角度综合分析,总体研判国内外研究和应用进展。结果表明,太阳能建筑光热领域研究持续处于热点,中文文献研究内容自成体系,学科与关键词间交叉不足;国内外研究发展历程与当前研究阶段存在差异,国外研究目前着重聚焦新材料等基础研发方向,国内研究重点关注系统性优化与改造。
基金Project supported by the Administration of Science,Technology and Industry of National Defense of China (Grant No.HTKJ2021KL504001)the National Natural Science Foundation of China (Grant Nos.12004297 and 12174364)+3 种基金the China Postdoctoral Science Foundation (Grant No.2022M712507)the Fundamental Research Funds for the Central Universities (Grant No.xzy01202003)the National 111 Project of China (Grant No.B14040)the support from the Instrument Analysis Center of Xi’an Jiaotong University。
文摘CMOS-compatible RF/microwave devices,such as filters and amplifiers,have been widely used in wireless communication systems.However,secondary-electron emission phenomena often occur in RF/microwave devices based on silicon(Si)wafers,especially in the high-frequency range.In this paper,we have studied the major factors that influence the secondary-electron yield(SEY)in commercial Si wafers with different doping concentrations.We show that the SEY is suppressed as the doping concentration increases,corresponding to a relatively short effective escape depthλ.Meanwhile,the reduced narrow band gap is beneficial in suppressing the SEY,in which the absence of a shallow energy band below the conduction band will easily capture electrons,as revealed by first-principles calculations.Thus,the new physical mechanism combined with the effective escape depth and band gap can provide useful guidance for the design of integrated RF/microwave devices based on Si wafers.
