Monte Carlo methods are used to analyze yields and performance of GaAs flash ADCs. Due to the nonuniformity of threshold voltage,the DNL and INL of flash ADC will decrease approximately linearly. And the higher the re...Monte Carlo methods are used to analyze yields and performance of GaAs flash ADCs. Due to the nonuniformity of threshold voltage,the DNL and INL of flash ADC will decrease approximately linearly. And the higher the resolution of ADC is, the faster these key nonlinear parameters decrease. When the nonuniformity increases to some degree,the yields of GaAs flash ADCs will decrease exponentially,and the missing code will increase more quickly for the higher resolution ADCs. So,GaAs HBT and HEMT with technology of etching stop will be widely used in high speed and high resolution ADCs.展开更多
Design,realization,and test of a monolithic GaAs 3bit phase digitizing DAC for 3bit digital radio-frequency memory are detailedly described.The 0.5μm fully ion-implanted GaAs MESFET is used to fabricate the circuit ...Design,realization,and test of a monolithic GaAs 3bit phase digitizing DAC for 3bit digital radio-frequency memory are detailedly described.The 0.5μm fully ion-implanted GaAs MESFET is used to fabricate the circuit in Nanjing Electronic Devices Institute’s (NEDI’s) 75mm standard process line.The high-speed DAC is designed with on-wafer 50Ω I/O impedance matching.Test results show that its work bandwidth is more than 1.5GHz,and phase accuracy is better than 4%.Its code conversion rate can be higher than 12Gbps.展开更多
文摘Monte Carlo methods are used to analyze yields and performance of GaAs flash ADCs. Due to the nonuniformity of threshold voltage,the DNL and INL of flash ADC will decrease approximately linearly. And the higher the resolution of ADC is, the faster these key nonlinear parameters decrease. When the nonuniformity increases to some degree,the yields of GaAs flash ADCs will decrease exponentially,and the missing code will increase more quickly for the higher resolution ADCs. So,GaAs HBT and HEMT with technology of etching stop will be widely used in high speed and high resolution ADCs.
文摘Design,realization,and test of a monolithic GaAs 3bit phase digitizing DAC for 3bit digital radio-frequency memory are detailedly described.The 0.5μm fully ion-implanted GaAs MESFET is used to fabricate the circuit in Nanjing Electronic Devices Institute’s (NEDI’s) 75mm standard process line.The high-speed DAC is designed with on-wafer 50Ω I/O impedance matching.Test results show that its work bandwidth is more than 1.5GHz,and phase accuracy is better than 4%.Its code conversion rate can be higher than 12Gbps.
