针对氮化镓高电子迁移率晶体管(GaN High Electron Mobility Transistor,GaN HEMT)小信号等效电路模型参数提取和优化过程中存在的误差累计问题,基于GaN HEMT 19元件小信号模型,提出了一种扫参与迭代相结合的参数提取算法.该算法在迭代...针对氮化镓高电子迁移率晶体管(GaN High Electron Mobility Transistor,GaN HEMT)小信号等效电路模型参数提取和优化过程中存在的误差累计问题,基于GaN HEMT 19元件小信号模型,提出了一种扫参与迭代相结合的参数提取算法.该算法在迭代过程中,每次使用比前一次更准确的元件值进行计算,可使结果趋向最优解.通过Matlab编程实现后计算结果表明,仿真与实测S参数在0.1~40GHz频率范围内吻合良好.展开更多
Ga NHEMT由于同时具有高功率密度和高速度的特点,是国内外学者研究的热点。同时,E类功率放大器具有良好的高效率宽频带的特性,应用前景广泛。本文基于南京电子器件研究所Ga N HEMT器件,开展了Ku波段Ga N E类功率放大器设计研究。针对Ga ...Ga NHEMT由于同时具有高功率密度和高速度的特点,是国内外学者研究的热点。同时,E类功率放大器具有良好的高效率宽频带的特性,应用前景广泛。本文基于南京电子器件研究所Ga N HEMT器件,开展了Ku波段Ga N E类功率放大器设计研究。针对Ga N HEMT器件较高的输出电容Cds,采用补偿微带的结构减小寄生参数的影响,设计了13.7GHz^14.2GHz的Ga N E类功率放大器。实测表明,该放大器在连续波输入功率25d Bm的情况下,在13.7GHz^14.2GHz频率范围内漏极效率大于36%,输出功率大于30d Bm。展开更多
A high-performance terahertz Schottky barrier diode(SBD)with an inverted trapezoidal epitaxial cross-sectional structure featuring high varactor characteristics and reverse breakdown characteristics is reported in thi...A high-performance terahertz Schottky barrier diode(SBD)with an inverted trapezoidal epitaxial cross-sectional structure featuring high varactor characteristics and reverse breakdown characteristics is reported in this paper.Inductively coupled plasma dry etching and dissolution wet etching are used to define the profile of the epitaxial layer,by which the voltage-dependent variation trend of the thickness of the metal-semiconductor contact depletion layer is modified.The simulation of the inverted trapezoidal epitaxial cross-section SBD is also conducted to explain the physical mechanism of the electric field and space charge region area.Compared with the normal structure,the grading coefficient M increases from 0.47 to 0.52,and the capacitance modulation ratio(C^(max)/C_(min))increases from 6.70 to 7.61.The inverted trapezoidal epitaxial cross-section structure is a promising approach to improve the variable-capacity ratio by eliminating the accumulation of charge at the Schottky electrode edge.A 190 GHz frequency doubler based on the inverted trapezoidal epitaxial cross-section SBD also shows a doubling efficiency of 35%compared to that 30%of a normal SBD.展开更多
文摘针对氮化镓高电子迁移率晶体管(GaN High Electron Mobility Transistor,GaN HEMT)小信号等效电路模型参数提取和优化过程中存在的误差累计问题,基于GaN HEMT 19元件小信号模型,提出了一种扫参与迭代相结合的参数提取算法.该算法在迭代过程中,每次使用比前一次更准确的元件值进行计算,可使结果趋向最优解.通过Matlab编程实现后计算结果表明,仿真与实测S参数在0.1~40GHz频率范围内吻合良好.
文摘Ga NHEMT由于同时具有高功率密度和高速度的特点,是国内外学者研究的热点。同时,E类功率放大器具有良好的高效率宽频带的特性,应用前景广泛。本文基于南京电子器件研究所Ga N HEMT器件,开展了Ku波段Ga N E类功率放大器设计研究。针对Ga N HEMT器件较高的输出电容Cds,采用补偿微带的结构减小寄生参数的影响,设计了13.7GHz^14.2GHz的Ga N E类功率放大器。实测表明,该放大器在连续波输入功率25d Bm的情况下,在13.7GHz^14.2GHz频率范围内漏极效率大于36%,输出功率大于30d Bm。
基金Project supported by the National Natural Science Foundation of China (Grant No.61871072)。
文摘A high-performance terahertz Schottky barrier diode(SBD)with an inverted trapezoidal epitaxial cross-sectional structure featuring high varactor characteristics and reverse breakdown characteristics is reported in this paper.Inductively coupled plasma dry etching and dissolution wet etching are used to define the profile of the epitaxial layer,by which the voltage-dependent variation trend of the thickness of the metal-semiconductor contact depletion layer is modified.The simulation of the inverted trapezoidal epitaxial cross-section SBD is also conducted to explain the physical mechanism of the electric field and space charge region area.Compared with the normal structure,the grading coefficient M increases from 0.47 to 0.52,and the capacitance modulation ratio(C^(max)/C_(min))increases from 6.70 to 7.61.The inverted trapezoidal epitaxial cross-section structure is a promising approach to improve the variable-capacity ratio by eliminating the accumulation of charge at the Schottky electrode edge.A 190 GHz frequency doubler based on the inverted trapezoidal epitaxial cross-section SBD also shows a doubling efficiency of 35%compared to that 30%of a normal SBD.
