We present a study on inelastic thermoelectric devices, wherein charge currents and electronic and phononic heat currents are intricately interconnected. The employment of double quantum dots in conjunction with a pho...We present a study on inelastic thermoelectric devices, wherein charge currents and electronic and phononic heat currents are intricately interconnected. The employment of double quantum dots in conjunction with a phonon reservoir positions them as promising candidates for quantum thermoelectric diodes and transistors. We illustrate that quantum coherence yields significant charge and Seebeck rectification effects. It is worth noting that, while the thermal transistor effect is observable in the linear response regime, especially when phononassisted inelastic processes dominate the transport, quantum coherence does not enhance thermal amplification.Our work may provide valuable insights for the optimization of inelastic thermoelectric devices.展开更多
基金supported by the National Natural Science Foundation of China (Grant No.12305050)Jiangsu Key Disciplines of the Fourteenth Five-Year Plan (Grant No.2021135)+1 种基金the Natural Science Foundation of Jiangsu Higher Education Institutions of China (Grant No.23KJB140017)the Opening Project of Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology。
文摘We present a study on inelastic thermoelectric devices, wherein charge currents and electronic and phononic heat currents are intricately interconnected. The employment of double quantum dots in conjunction with a phonon reservoir positions them as promising candidates for quantum thermoelectric diodes and transistors. We illustrate that quantum coherence yields significant charge and Seebeck rectification effects. It is worth noting that, while the thermal transistor effect is observable in the linear response regime, especially when phononassisted inelastic processes dominate the transport, quantum coherence does not enhance thermal amplification.Our work may provide valuable insights for the optimization of inelastic thermoelectric devices.
