In order to improve the characteristics of the general broad-waveguide 808-nm semiconductor laser diode （LD）, we design a new type quantum well LD with an asymmetric cladding structure. The structure is grown by met...In order to improve the characteristics of the general broad-waveguide 808-nm semiconductor laser diode （LD）, we design a new type quantum well LD with an asymmetric cladding structure. The structure is grown by metal organic chemical vapor deposition （MOCVD）. For the devices with 100-ttm-wide stripe and 1000-/zm-long cavity under continuous-wave （CW） operation condition, the typical threshold current is 190 mA, the slope efficiency is 1.31 W/A, the wall-plug efficiency reaches 63%, and the maximum output power reaches higher than 7 W. And the internal absorption value decreases to 1.5 cm^-1.展开更多
Asymmetric broad-waveguide separate-confinement heterostructure（BW-SCH） quantum well（QW） laser diode emitting at 808 nm is analyzed and designed theoretically.The dependence of the optical field distribution, vert...Asymmetric broad-waveguide separate-confinement heterostructure（BW-SCH） quantum well（QW） laser diode emitting at 808 nm is analyzed and designed theoretically.The dependence of the optical field distribution, vertical far-field angle,and internal loss on different thicknesses of the upper waveguide layer is calculated and analyzed.Calculated results show that when the thicknesses of the lower and upper waveguide layers are 0.45 and 0.3μm,respectively,for the devices with 100-μm-wide stripe and 1000-μm-long cavity,an output power of 7.6 W at 8 A,a vertical far-field angle of 37°,a slope efficiency of 1.32 W/A, and a threshold current of 189 mA can be obtained.展开更多
基金supported by the National Natural Science Foundation of China (No.50472068)the Program for New Century Excellent Talents in University
文摘In order to improve the characteristics of the general broad-waveguide 808-nm semiconductor laser diode （LD）, we design a new type quantum well LD with an asymmetric cladding structure. The structure is grown by metal organic chemical vapor deposition （MOCVD）. For the devices with 100-ttm-wide stripe and 1000-/zm-long cavity under continuous-wave （CW） operation condition, the typical threshold current is 190 mA, the slope efficiency is 1.31 W/A, the wall-plug efficiency reaches 63%, and the maximum output power reaches higher than 7 W. And the internal absorption value decreases to 1.5 cm^-1.
基金supported by the National Natural Science Foundation of China(No.50472068)the Program for New Century Excellent Talents in University.
文摘Asymmetric broad-waveguide separate-confinement heterostructure（BW-SCH） quantum well（QW） laser diode emitting at 808 nm is analyzed and designed theoretically.The dependence of the optical field distribution, vertical far-field angle,and internal loss on different thicknesses of the upper waveguide layer is calculated and analyzed.Calculated results show that when the thicknesses of the lower and upper waveguide layers are 0.45 and 0.3μm,respectively,for the devices with 100-μm-wide stripe and 1000-μm-long cavity,an output power of 7.6 W at 8 A,a vertical far-field angle of 37°,a slope efficiency of 1.32 W/A, and a threshold current of 189 mA can be obtained.
