Magnetotransport measurements are carried out on the AlGaN/AlN/GaN in an SiC heterostructure,which demonstrates the existence of the high-quality two-dimensional electron gas (2DGE) at the AlN/GaN interface.While the ...Magnetotransport measurements are carried out on the AlGaN/AlN/GaN in an SiC heterostructure,which demonstrates the existence of the high-quality two-dimensional electron gas (2DGE) at the AlN/GaN interface.While the carrier concentration reaches 1.32×10 13 cm-2 and stays relatively unchanged with the decreasing temperature,the mobility of the 2DEG increases to 1.21×10 4 cm 2 /(V·s) at 2 K.The Shubnikov-de Haas (SdH) oscillations are observed in a magnetic field as low as 2.5 T at 2 K.By the measurements and the analyses of the temperature-dependent SdH oscillations,the effective mass of the 2DEG is determined.The ratio of the transport lifetime to the quantum scattering time is 9 in our sample,indicating that small-angle scattering is predominant.展开更多
基金Project supported by the National Basic Research Program of China (Grant No.2011CB309606)
文摘Magnetotransport measurements are carried out on the AlGaN/AlN/GaN in an SiC heterostructure,which demonstrates the existence of the high-quality two-dimensional electron gas (2DGE) at the AlN/GaN interface.While the carrier concentration reaches 1.32×10 13 cm-2 and stays relatively unchanged with the decreasing temperature,the mobility of the 2DEG increases to 1.21×10 4 cm 2 /(V·s) at 2 K.The Shubnikov-de Haas (SdH) oscillations are observed in a magnetic field as low as 2.5 T at 2 K.By the measurements and the analyses of the temperature-dependent SdH oscillations,the effective mass of the 2DEG is determined.The ratio of the transport lifetime to the quantum scattering time is 9 in our sample,indicating that small-angle scattering is predominant.
