The depth of the amorphous-crystalline interface for 1 × 10^(15) to 1×10^(17)Zn/cm^(2) ions in silicon has been measured by high resolution backscattering technique.The variation of this interface depth with...The depth of the amorphous-crystalline interface for 1 × 10^(15) to 1×10^(17)Zn/cm^(2) ions in silicon has been measured by high resolution backscattering technique.The variation of this interface depth with fluency is found to agree well with the creation and overlap model of the simple direct amorphous zone.展开更多
文摘The depth of the amorphous-crystalline interface for 1 × 10^(15) to 1×10^(17)Zn/cm^(2) ions in silicon has been measured by high resolution backscattering technique.The variation of this interface depth with fluency is found to agree well with the creation and overlap model of the simple direct amorphous zone.
