In this work,the ultrasonic assisted active metal soldering of SiO_(2) glass and Al was successfully achieved using Sn-2Ti solder filler at a low soldering temperature of 250℃in ambient atmosphere.A nano-crystalline...In this work,the ultrasonic assisted active metal soldering of SiO_(2) glass and Al was successfully achieved using Sn-2Ti solder filler at a low soldering temperature of 250℃in ambient atmosphere.A nano-crystallineα-Al2O3 layer with the average thickness of 13.9 nm and a nano-crystalline R-TiO_(2) layer with the average thickness of 16.2 nm are formed at the interface of Al/Sn and SiO_(2)/Sn respectively because Al elements did not diffuse from Al alloy side to SiO_(2) side,which verified that a sono-oxidation reaction had occurred during the ultrasonic assisted active metal soldering process.The soldered butt joints exhibited an average tensile strength of 25.31 MPa.展开更多
The formulae for parameters of a negative electron affinity semiconductor(NEAS)with large mean escape depth of secondary electrons A(NEASLD)are deduced.The methods for obtaining parameters such asλ,B,E_(pom)and the m...The formulae for parameters of a negative electron affinity semiconductor(NEAS)with large mean escape depth of secondary electrons A(NEASLD)are deduced.The methods for obtaining parameters such asλ,B,E_(pom)and the maximumδandδat 100.0 keV≥E_(po)≥1.0 keV of a NEASLD with the deduced formulae are presented(B is the probability that an internal secondary electron escapes into the vacuum upon reaching the emission surface of the emitter,δis the secondary electron yield,E_(po)is the incident energy of primary electrons and E_(pom)is the E_(po)corresponding to the maximumδ).The parameters obtained here are analyzed,and it can be concluded that several parameters of NEASLDs obtained by the methods presented here agree with those obtained by other authors.The relation between the secondary electron emission and photoemission from a NEAS with large mean escape depth of excited electrons is investigated,and it is concluded that the presented method of obtaining A is more accurate than that of obtaining the corresponding parameter for a NEAS with largeλ_(ph)(λ_(ph)being the mean escape depth of photoelectrons),and that the presented method of calculating B at E_(po)>10.0 keV is more widely applicable for obtaining the corresponding parameters for a NEAS with largeλ_(ph).展开更多
文摘In this work,the ultrasonic assisted active metal soldering of SiO_(2) glass and Al was successfully achieved using Sn-2Ti solder filler at a low soldering temperature of 250℃in ambient atmosphere.A nano-crystallineα-Al2O3 layer with the average thickness of 13.9 nm and a nano-crystalline R-TiO_(2) layer with the average thickness of 16.2 nm are formed at the interface of Al/Sn and SiO_(2)/Sn respectively because Al elements did not diffuse from Al alloy side to SiO_(2) side,which verified that a sono-oxidation reaction had occurred during the ultrasonic assisted active metal soldering process.The soldered butt joints exhibited an average tensile strength of 25.31 MPa.
基金Project supported by the National Natural Science Foundation of China(Grant No.11873013)。
文摘The formulae for parameters of a negative electron affinity semiconductor(NEAS)with large mean escape depth of secondary electrons A(NEASLD)are deduced.The methods for obtaining parameters such asλ,B,E_(pom)and the maximumδandδat 100.0 keV≥E_(po)≥1.0 keV of a NEASLD with the deduced formulae are presented(B is the probability that an internal secondary electron escapes into the vacuum upon reaching the emission surface of the emitter,δis the secondary electron yield,E_(po)is the incident energy of primary electrons and E_(pom)is the E_(po)corresponding to the maximumδ).The parameters obtained here are analyzed,and it can be concluded that several parameters of NEASLDs obtained by the methods presented here agree with those obtained by other authors.The relation between the secondary electron emission and photoemission from a NEAS with large mean escape depth of excited electrons is investigated,and it is concluded that the presented method of obtaining A is more accurate than that of obtaining the corresponding parameter for a NEAS with largeλ_(ph)(λ_(ph)being the mean escape depth of photoelectrons),and that the presented method of calculating B at E_(po)>10.0 keV is more widely applicable for obtaining the corresponding parameters for a NEAS with largeλ_(ph).
