This letter proposes a high-conductivity insulated gate bipolar transistor(HC-IGBT) with Schottky contact formed on the p-base, which forms a hole barrier at the p-base side to enhance the conductivity modulation effe...This letter proposes a high-conductivity insulated gate bipolar transistor(HC-IGBT) with Schottky contact formed on the p-base, which forms a hole barrier at the p-base side to enhance the conductivity modulation effect. TCAD simulation shows that the HC-IGBT provides a current density increase by 53% and turn-off losses decrease by 27% when compared to a conventional field-stop IGBT(FS-IGBT). Hence, the proposed IGBT exhibits superior electrical performance for high-efficiency power electronic systems.展开更多
This letter proposes a novel IGBT structure with an n-type barrier(NB-IGBT) formed on the silicon surface to enhance the conductivity modulation effect with a relatively simple fabrication process. TCAD simulation ind...This letter proposes a novel IGBT structure with an n-type barrier(NB-IGBT) formed on the silicon surface to enhance the conductivity modulation effect with a relatively simple fabrication process. TCAD simulation indicates that the NB-IGBT offers a current density 49% higher and turn-off losses 25% lower than a conventional field-stop IGBT(FS-IGBT) with a similar breakdown voltage, turn-off time and avalanche energy. Furthermore,the NB-IGBT exhibits extremely large transconductance, which is favorable to turn-on and turn-off. Therefore, the proposed IGBT offers an attractive option for high-voltage and large-power electronics applications.展开更多
基金supported by the National High Technology Research and Development Program of China(No.2014AA052601)the National Natural Science Foundation of China(No.51277060)
文摘This letter proposes a high-conductivity insulated gate bipolar transistor(HC-IGBT) with Schottky contact formed on the p-base, which forms a hole barrier at the p-base side to enhance the conductivity modulation effect. TCAD simulation shows that the HC-IGBT provides a current density increase by 53% and turn-off losses decrease by 27% when compared to a conventional field-stop IGBT(FS-IGBT). Hence, the proposed IGBT exhibits superior electrical performance for high-efficiency power electronic systems.
基金supported by the National High Technology Research and Development Program of China(No.2014AA052601)the National Natural Science Foundation of China(No.51277060)
文摘This letter proposes a novel IGBT structure with an n-type barrier(NB-IGBT) formed on the silicon surface to enhance the conductivity modulation effect with a relatively simple fabrication process. TCAD simulation indicates that the NB-IGBT offers a current density 49% higher and turn-off losses 25% lower than a conventional field-stop IGBT(FS-IGBT) with a similar breakdown voltage, turn-off time and avalanche energy. Furthermore,the NB-IGBT exhibits extremely large transconductance, which is favorable to turn-on and turn-off. Therefore, the proposed IGBT offers an attractive option for high-voltage and large-power electronics applications.
