Displacement damage effects on the charge-coupled device(CCD)induced by neutrons at the back-streaming white neutron source(Back-n)in the China Spallation Neutron Source(CSNS)are analyzed according to an online irradi...Displacement damage effects on the charge-coupled device(CCD)induced by neutrons at the back-streaming white neutron source(Back-n)in the China Spallation Neutron Source(CSNS)are analyzed according to an online irradiation experiment.The hot pixels,random telegraph signal(RTS),mean dark signal,dark current and dark signal non-uniformity(DSNU)induced by Back-n are presented.The dark current is calculated according to the mean dark signal at various integration times.The single-particle displacement damage and transient response are also observed based on the online measurement data.The trends of hot pixels,mean dark signal,DSNU and RTS degradation are related to the integration time and irradiation fluence.The mean dark signal,dark current and DSNU2 are nearly linear with neutron irradiation fluence when nearly all the pixels do not reach saturation.In addition,the mechanisms of the displacement damage effects on the CCD are demonstrated by combining the experimental results and technology computer-aided design(TCAD)simulation.Radiation-induced traps in the space charge region of the CCD will act as generation/recombination centers of electron-hole pairs,leading to an increase in the dark signal.展开更多
Neutron radiation experiments of optocouplers at back-streaming white neutrons(back-n)in China Spallation Neutron Source(CSNS)are presented.The displacement damages induced by neutron radiation are analyzed.The perfor...Neutron radiation experiments of optocouplers at back-streaming white neutrons(back-n)in China Spallation Neutron Source(CSNS)are presented.The displacement damages induced by neutron radiation are analyzed.The performance degradations of two types of optocouplers are compared.The degradations of current transfer ratio(CTR)are analyzed,and the mechanisms induced by radiation are also demonstrated.With the increase of the accumulated fluence,the CTR is degrading linearly with neutron fluence.The radiation hardening of optocouplers can be improved when the forward current is increased.Other parameters related to CTR degradation of optocouplers are also analyzed.展开更多
In this paper,the degradation related parameters of GaInP/GaAs/Ge triple-junction solar cell induced by electron irradiation are carried out by numerical simulation.The degradation results of short-circuit current,ope...In this paper,the degradation related parameters of GaInP/GaAs/Ge triple-junction solar cell induced by electron irradiation are carried out by numerical simulation.The degradation results of short-circuit current,open-circuit voltage,maximum power have been investigated,and the degradation mechanism is analyzed.Combining the degradation results,the degradation of normalized parameters versus displacement damage dose is obtained.The results show that the degradation increases with the increase of the electron fluence and electron irradiation energy.The degradation normalized related parameters versus displacement damage dose can be characterized by a special curve that is not affected by the type of irradiated particles.By calculating the annual displacement damage dose and the on-orbit operation time of special space orbit,the degradation of normalized parameters can be obtained with the fitting curve in the simulation.The study will provide an approach to estimate the radiation damage of triple-junction solar cell induced by space particle irradiation.展开更多
基金Project supported by the Foundation of State Key Laboratory of China(Grant Nos.SKLIPR1903Z,1803)the National Natural Science Foundation of China(Grant Nos.U2167208 and 11875223).
文摘Displacement damage effects on the charge-coupled device(CCD)induced by neutrons at the back-streaming white neutron source(Back-n)in the China Spallation Neutron Source(CSNS)are analyzed according to an online irradiation experiment.The hot pixels,random telegraph signal(RTS),mean dark signal,dark current and dark signal non-uniformity(DSNU)induced by Back-n are presented.The dark current is calculated according to the mean dark signal at various integration times.The single-particle displacement damage and transient response are also observed based on the online measurement data.The trends of hot pixels,mean dark signal,DSNU and RTS degradation are related to the integration time and irradiation fluence.The mean dark signal,dark current and DSNU2 are nearly linear with neutron irradiation fluence when nearly all the pixels do not reach saturation.In addition,the mechanisms of the displacement damage effects on the CCD are demonstrated by combining the experimental results and technology computer-aided design(TCAD)simulation.Radiation-induced traps in the space charge region of the CCD will act as generation/recombination centers of electron-hole pairs,leading to an increase in the dark signal.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11875223,11805155,and 11690043)the Chinese Academy of Sciences Strategic Pilot Science and Technology Project(Grant No.XDA15015000)+1 种基金the Innovation Foundation of Radiation Application,China(Grant No.KFZC2018040201)the Foundation of State Key Laboratory of China(Grant Nos.SKLIPR1803 and 1903Z)
文摘Neutron radiation experiments of optocouplers at back-streaming white neutrons(back-n)in China Spallation Neutron Source(CSNS)are presented.The displacement damages induced by neutron radiation are analyzed.The performance degradations of two types of optocouplers are compared.The degradations of current transfer ratio(CTR)are analyzed,and the mechanisms induced by radiation are also demonstrated.With the increase of the accumulated fluence,the CTR is degrading linearly with neutron fluence.The radiation hardening of optocouplers can be improved when the forward current is increased.Other parameters related to CTR degradation of optocouplers are also analyzed.
基金supported by the National Natural Science Foundation of China(Nos.11875223 and 11805155)the Strategic Priority Research Program of Chinese Academy of Sciences(No.XDA15015000)+1 种基金the Innovation Foundation of Radiation Application(No.KFZC2018040201)the Foundation of State Key Laboratory of China(No.SKLIPR1803,1903Z)。
文摘In this paper,the degradation related parameters of GaInP/GaAs/Ge triple-junction solar cell induced by electron irradiation are carried out by numerical simulation.The degradation results of short-circuit current,open-circuit voltage,maximum power have been investigated,and the degradation mechanism is analyzed.Combining the degradation results,the degradation of normalized parameters versus displacement damage dose is obtained.The results show that the degradation increases with the increase of the electron fluence and electron irradiation energy.The degradation normalized related parameters versus displacement damage dose can be characterized by a special curve that is not affected by the type of irradiated particles.By calculating the annual displacement damage dose and the on-orbit operation time of special space orbit,the degradation of normalized parameters can be obtained with the fitting curve in the simulation.The study will provide an approach to estimate the radiation damage of triple-junction solar cell induced by space particle irradiation.
