以实验试错法和基于密度泛函理论的方法为代表的传统新材料发现方法,逐渐在开发成本、效率以及周期等方面显现出不足。人工智能,特别是机器学习和深度学习,综合强大的数据处理和高预测性能,在材料发现、材料设计、材料检测和材料分析等...以实验试错法和基于密度泛函理论的方法为代表的传统新材料发现方法,逐渐在开发成本、效率以及周期等方面显现出不足。人工智能,特别是机器学习和深度学习,综合强大的数据处理和高预测性能,在材料发现、材料设计、材料检测和材料分析等领域展示出优势,对新材料研发创新具有重要推动作用。以近10年美国信息情报研究所(ISI)下属的Web of Science(WOS)核心数据库收录的相关文献为数据源,使用CiteSpace软件开展可视化分析,旨在总结分析人工智能在材料科学领域发展的研究现状、研究热点及其研究发展趋势,为中国人工智能与材料科学融合创新发展提供相关参考,以期提升研究水平。展开更多
We report the edge-defined-film-fed(EFG)-grown β-Ga_(2)O_(3)-based Schottky photodiodes.The device has a reverse leakage current of ~nA and a rectified ratio of ~10^(4) at ±5 V.In addition,the photodiode detecto...We report the edge-defined-film-fed(EFG)-grown β-Ga_(2)O_(3)-based Schottky photodiodes.The device has a reverse leakage current of ~nA and a rectified ratio of ~10^(4) at ±5 V.In addition,the photodiode detector shows a dark current of 0.3 pA,a photo-responsivity(R) of 2.875 mA/W,a special detectivity(D*) of 10^(10) Jones,and an external quantum efficiency(EQE) of 1.4% at zero bias,illustrating a self-powered operation.This work may advance the development of the Ga_(2)O_(3)-based Schottky diode solar-blind photodetectors.展开更多
Gallium oxide(Ga_2O_3), a typical ultra wide bandgap semiconductor, with a bandgap of ~4.9 e V, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of 3444, is promising to be used in high-power and ...Gallium oxide(Ga_2O_3), a typical ultra wide bandgap semiconductor, with a bandgap of ~4.9 e V, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of 3444, is promising to be used in high-power and high-voltage devices.Recently, a keen interest in employing Ga_2O_3 in power devices has been aroused. Many researches have verified that Ga_2O_3 is an ideal candidate for fabricating power devices. In this review, we summarized the recent progress of field-effect transistors(FETs) and Schottky barrier diodes(SBDs) based on Ga_2O_3, which may provide a guideline for Ga_2O_3 to be preferably used in power devices fabrication.展开更多
Si-dopedβ-Ga_(2)O_(3)films are fabricated through metal-organic chemical vapor deposition(MOCVD).Solar-blind ultraviolet(UV)photodetector(PD)based on the films is fabricated by standard photolithography,and the photo...Si-dopedβ-Ga_(2)O_(3)films are fabricated through metal-organic chemical vapor deposition(MOCVD).Solar-blind ultraviolet(UV)photodetector(PD)based on the films is fabricated by standard photolithography,and the photodetection properties are investigated.The results show that the photocurrent increases to 11.2 mA under 200μW·cm^(-2)254 nm illumination and±20 V bias,leading to photo-responsivity as high as 788 A·W^(-1).The Si-dopedβ-Ga2O3-based PD is promised to perform solar-blind photodetection with high performance.展开更多
文摘以实验试错法和基于密度泛函理论的方法为代表的传统新材料发现方法,逐渐在开发成本、效率以及周期等方面显现出不足。人工智能,特别是机器学习和深度学习,综合强大的数据处理和高预测性能,在材料发现、材料设计、材料检测和材料分析等领域展示出优势,对新材料研发创新具有重要推动作用。以近10年美国信息情报研究所(ISI)下属的Web of Science(WOS)核心数据库收录的相关文献为数据源,使用CiteSpace软件开展可视化分析,旨在总结分析人工智能在材料科学领域发展的研究现状、研究热点及其研究发展趋势,为中国人工智能与材料科学融合创新发展提供相关参考,以期提升研究水平。
基金Project supported by BUPT Excellent Ph.D.Students Foundation(Grant No.CX2020314)the National Natural Science Foundation of China(Grant Nos.61774019,51572033,and 51572241)+1 种基金the Fund of State Key Laboratory of Information Photonics and Optical Communications(BUPT)the Fundamental Research Funds for the Central Universities,China。
文摘We report the edge-defined-film-fed(EFG)-grown β-Ga_(2)O_(3)-based Schottky photodiodes.The device has a reverse leakage current of ~nA and a rectified ratio of ~10^(4) at ±5 V.In addition,the photodiode detector shows a dark current of 0.3 pA,a photo-responsivity(R) of 2.875 mA/W,a special detectivity(D*) of 10^(10) Jones,and an external quantum efficiency(EQE) of 1.4% at zero bias,illustrating a self-powered operation.This work may advance the development of the Ga_(2)O_(3)-based Schottky diode solar-blind photodetectors.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61774019,51572033,and 51572241)the Beijing Municipal Commission of Science and Technology,China(Grant No.SX2018-04)
文摘Gallium oxide(Ga_2O_3), a typical ultra wide bandgap semiconductor, with a bandgap of ~4.9 e V, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of 3444, is promising to be used in high-power and high-voltage devices.Recently, a keen interest in employing Ga_2O_3 in power devices has been aroused. Many researches have verified that Ga_2O_3 is an ideal candidate for fabricating power devices. In this review, we summarized the recent progress of field-effect transistors(FETs) and Schottky barrier diodes(SBDs) based on Ga_2O_3, which may provide a guideline for Ga_2O_3 to be preferably used in power devices fabrication.
基金the National Natural Science Foundation of China(Grant Nos.61774019 and 51572033)the Fund of State Key Laboratory of Information Photonics and Optical Communications(BUPT)the Fundamental Research Funds for the Central Universities,China.
文摘Si-dopedβ-Ga_(2)O_(3)films are fabricated through metal-organic chemical vapor deposition(MOCVD).Solar-blind ultraviolet(UV)photodetector(PD)based on the films is fabricated by standard photolithography,and the photodetection properties are investigated.The results show that the photocurrent increases to 11.2 mA under 200μW·cm^(-2)254 nm illumination and±20 V bias,leading to photo-responsivity as high as 788 A·W^(-1).The Si-dopedβ-Ga2O3-based PD is promised to perform solar-blind photodetection with high performance.
