InGaSb/AlGaAsSb double-quantum-well diode lasers emitting around 2 μm are demonstrated. The AlGaAsSb barriers of the lasers are grown with digital alloy techniques consisting of binary AlSb/AlAs/GaSb short-period pai...InGaSb/AlGaAsSb double-quantum-well diode lasers emitting around 2 μm are demonstrated. The AlGaAsSb barriers of the lasers are grown with digital alloy techniques consisting of binary AlSb/AlAs/GaSb short-period pairs. Peak power conversion efficiency of 26% and an efficiency higher than 16% at 1 W are achieved at continuous-wave operation for a 2-mm-long and 100-μm-wide stripe laser. The maximum output power of a single emitter reaches to 1.4 W at 7 A.19-emitter bars with maximum efficiency higher than 20% and maximum power of 16 W are fabricated. Lasers with the short-period-pair barriers are proved to have improved temperature properties and wavelength stabilities. The characteristic temperature(T_0) is up to 140?C near room temperature(25–55?C).展开更多
成功制备出室温激射波长为2μm的Ga Sb基侧向耦合分布反馈量子阱激光器.采用全息曝光及电感耦合等离子体刻蚀技术制备二阶布拉格光栅.优化了光栅制备的刻蚀条件,并获得室温2μm单纵模激射.激光器输出光功率超过5 m W,最大边模抑制比达到...成功制备出室温激射波长为2μm的Ga Sb基侧向耦合分布反馈量子阱激光器.采用全息曝光及电感耦合等离子体刻蚀技术制备二阶布拉格光栅.优化了光栅制备的刻蚀条件,并获得室温2μm单纵模激射.激光器输出光功率超过5 m W,最大边模抑制比达到24 d B.展开更多
We report a type-Ⅱ GaSb-based interband cascade laser operating a continuous wave at room temperature. The cascade region of interband cascade laser was designed using the ‘W' configuration of the active quantum...We report a type-Ⅱ GaSb-based interband cascade laser operating a continuous wave at room temperature. The cascade region of interband cascade laser was designed using the ‘W' configuration of the active quantum wells and the ‘Carrier Rebalancing' method in the electron injector. The devices were processed into narrow ridges and mounted epitaxial side down on a copper heat sink. The 25-μm-wide, 3-mm-long ridge without coated facets generated 41.4 mW of continuous wave output power at T = 15℃. And a low threshold current density of 267 A/cm^2 is achieved. The emission wavelength of the ICL is 3452.3 nm at 0.5 A.展开更多
We compare the effect of InGaAs/GaAs strained-layer superlattice(SLS) with that of GaAs thick buffer layer(TBL)serving as a dislocation filter layer. The InGaAs/GaAs SLS is found to be more effective than GaAs TBL in ...We compare the effect of InGaAs/GaAs strained-layer superlattice(SLS) with that of GaAs thick buffer layer(TBL)serving as a dislocation filter layer. The InGaAs/GaAs SLS is found to be more effective than GaAs TBL in blocking the propagation of threading dislocations, which are generated at the interface between the GaAs buffer layer and the Si substrate. Through testing and analysis, we conclude that the weaker photoluminescence for quantum dots(QDs) on Si substrate is caused by the quality of capping In_(0.15)Ga_(0.85)As and upper GaAs. We also find that the periodic misfits at the interface are related to the initial stress release of GaAs islands, which guarantees that the upper layers are stress-free.展开更多
The epitaxial growth conditions and performance of a diode-pumped GaSb-based optically pumped semiconductor disk laser(SDL) emitting near 2.0 μm in an external cavity configuration are reported. The high quality epit...The epitaxial growth conditions and performance of a diode-pumped GaSb-based optically pumped semiconductor disk laser(SDL) emitting near 2.0 μm in an external cavity configuration are reported. The high quality epitaxial structure,grown on Te-doped(001) oriented GaSb substrate by molecular beam epitaxy, consists of a distributed Bragg reflector(DBR), a multi-quantum-well gain region, and a window layer. An intra-cavity SiC heat spreader was attached to the gain chip for effective thermal management. A continuous-wave output power of over 1 W operating at 2.03 μm wavelength operating near room temperature was achieved using a 3% output coupler.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61790580 and 61435012)the National Basic Research Program of China(Grant No.2014CB643903)the Scientific Instrument Developing Project of the Chinese Academy of Sciences(Grant No.YJKYYQ20170032)
文摘InGaSb/AlGaAsSb double-quantum-well diode lasers emitting around 2 μm are demonstrated. The AlGaAsSb barriers of the lasers are grown with digital alloy techniques consisting of binary AlSb/AlAs/GaSb short-period pairs. Peak power conversion efficiency of 26% and an efficiency higher than 16% at 1 W are achieved at continuous-wave operation for a 2-mm-long and 100-μm-wide stripe laser. The maximum output power of a single emitter reaches to 1.4 W at 7 A.19-emitter bars with maximum efficiency higher than 20% and maximum power of 16 W are fabricated. Lasers with the short-period-pair barriers are proved to have improved temperature properties and wavelength stabilities. The characteristic temperature(T_0) is up to 140?C near room temperature(25–55?C).
基金Supported by National Natural Science Foundation of China (617905 80,61790581,61790582,61435012)the National Key Technologies R&D Program of China (2018YFA0306101)+1 种基金the Key R&D Program of Guangdong Province (2018R030329001)the Scientific Instrument Developing Project of the Chinese Academy of Sciences (YJKYYQ20170032)
文摘通过MBE外延系统生长了1.3µm的GaAs基InAs量子点激光器.为了获得更好的器件性能,InAs量子点的最优生长温度被标定为520℃,并且在有源区中引入Be掺杂.制备了脊宽100µm,腔长2 mm的激光器单管器件,在未镀膜的情况下,达到了峰值功率1.008 W的室温连续工作,阈值电流密度为110 A/cm^-2,在80℃下仍然可以实现连续工作,在50℃以下范围内,特征温度达到405 K.
基金Project supported by the Major Program of the National Natural Science Foundation of China(Grant No.61790580)the National Natural Science Foundation of China(Grant No.61435012)the National Basic Research Program of China(Grant No.2014CB643903)
文摘We report a type-Ⅱ GaSb-based interband cascade laser operating a continuous wave at room temperature. The cascade region of interband cascade laser was designed using the ‘W' configuration of the active quantum wells and the ‘Carrier Rebalancing' method in the electron injector. The devices were processed into narrow ridges and mounted epitaxial side down on a copper heat sink. The 25-μm-wide, 3-mm-long ridge without coated facets generated 41.4 mW of continuous wave output power at T = 15℃. And a low threshold current density of 267 A/cm^2 is achieved. The emission wavelength of the ICL is 3452.3 nm at 0.5 A.
基金Project supported by the National Key Research and Development Program of China(Grant No.2018YFA0306101)the Scientific Instrument Developing Project of Chinese Academy of Sciences(Grant No.YJKYYQ20170032)the National Natural Science Foundation of China(Grant Nos.61790581,61435012,and 61505196)
文摘We compare the effect of InGaAs/GaAs strained-layer superlattice(SLS) with that of GaAs thick buffer layer(TBL)serving as a dislocation filter layer. The InGaAs/GaAs SLS is found to be more effective than GaAs TBL in blocking the propagation of threading dislocations, which are generated at the interface between the GaAs buffer layer and the Si substrate. Through testing and analysis, we conclude that the weaker photoluminescence for quantum dots(QDs) on Si substrate is caused by the quality of capping In_(0.15)Ga_(0.85)As and upper GaAs. We also find that the periodic misfits at the interface are related to the initial stress release of GaAs islands, which guarantees that the upper layers are stress-free.
基金supported by the Major Program of the National Natural Science Foundation of China(Grant Nos.61790581,61790582,and 61790584)the National Natural Science Foundation of China(Grant No.61435012)the Scientific Instrument Developing Project of the Chinese Academy of Sciences(Grant No.YJKYYQ20170032)
文摘The epitaxial growth conditions and performance of a diode-pumped GaSb-based optically pumped semiconductor disk laser(SDL) emitting near 2.0 μm in an external cavity configuration are reported. The high quality epitaxial structure,grown on Te-doped(001) oriented GaSb substrate by molecular beam epitaxy, consists of a distributed Bragg reflector(DBR), a multi-quantum-well gain region, and a window layer. An intra-cavity SiC heat spreader was attached to the gain chip for effective thermal management. A continuous-wave output power of over 1 W operating at 2.03 μm wavelength operating near room temperature was achieved using a 3% output coupler.
