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用于MEMS红外传感器的集成低噪声CMOS接口电路设计 被引量:5
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作者 姚镭 郝跃国 +2 位作者 李铁 熊斌 王跃林 《传感技术学报》 CAS CSCD 北大核心 2007年第10期2203-2206,共4页
实现了一种应用于采集MEMS红外传感器微弱信号的低噪声CMOS接口电路.该电路应用了斩波技术(CHS),对斩波技术中抑制低频噪声的效率分析表明其可以有效降低低频噪声.利用苏州和舰科技(HJTC)的商用0.18μmCMOS工艺流程制作的试样芯片.测试... 实现了一种应用于采集MEMS红外传感器微弱信号的低噪声CMOS接口电路.该电路应用了斩波技术(CHS),对斩波技术中抑制低频噪声的效率分析表明其可以有效降低低频噪声.利用苏州和舰科技(HJTC)的商用0.18μmCMOS工艺流程制作的试样芯片.测试结果证实了此电路的工作原理.整个斩波放大系统的增益为84.9dB,带宽160Hz,等效输入噪声87nV/rtHz. 展开更多
关键词 CMOS接口电路 单片集成MEMS 斩波技术 红外传感器
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局部集成、灵活配置的Micro PMU或将成为电源管理主流模式
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作者 郝跃国 《集成电路应用》 2013年第6期12-13,共2页
分久必合、合久必分,专业功能整合是PMU发展的趋势,而按照功能、物理位置、更新灵活度、效率、散热等定义成若干个模块搭配使用的Micro PMU模式或将成为电源管理主流方式。
关键词 电源管理 PMU 流模式 集成 配置 功能整合 物理位置 搭配使用
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An area-efficient 55 nm 10-bit 1-MS/s SAR ADC for battery voltage measurement 被引量:1
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作者 陈宏铭 郝跃国 +1 位作者 赵龙 程玉华 《Journal of Semiconductors》 EI CAS CSCD 2013年第9期164-170,共7页
An area-efficient CMOS 1-MS/s 10-bit charge-redistribution SAR ADC for battery voltage measure- ment in a SoC chip is proposed. A new DAC architecture presents the benefits of a low power approach without applying the... An area-efficient CMOS 1-MS/s 10-bit charge-redistribution SAR ADC for battery voltage measure- ment in a SoC chip is proposed. A new DAC architecture presents the benefits of a low power approach without applying the common mode voltage. The threshold inverter quantizer (TIQ)-based CMOS Inverter is used as a comparator in the ADC to avoid static power consumption which is attractive in battery-supply application. Sixteen level-up shifters aim at converting the ultra low core voltage control signals to the higher voltage level analog circuit in a 55 nm CMOS process. The whole ADC power consumption is 2.5 mW with a maximum input capaci- tance of 12 pF in the sampling mode. The active area of the proposed ADC is 0.0462 mm2 and it achieves the SFDR and ENOB of 65.6917 dB and 9.8726 bits respectively with an input frequency of 200 kHz at 1 MS/s sampling rate. 展开更多
关键词 successive approximation register analog-to-digital converter charge redistribution threshold in-verter quantizer
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A novel switched capacitor bandgap reference with a correlated double sampling structure
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作者 陈建广 郝跃国 程玉华 《Journal of Semiconductors》 EI CAS CSCD 2013年第2期109-112,共4页
A switched capacitor bandgap voltage reference with correlated double sampling structure embedded in a temperature sensor is implemented in a standard 0.35 um CMOS process. Due to the smaller change of the op-amp's o... A switched capacitor bandgap voltage reference with correlated double sampling structure embedded in a temperature sensor is implemented in a standard 0.35 um CMOS process. Due to the smaller change of the op-amp's output voltage, this topology is very suitable for low power applications. In addition, errors caused by the finite op-amp gain, input offset voltage, and 1/f noise are eliminated with the correlated double sampling technique. Additionally, two-level process calibration techniques are designed to minimize the process spread. Finally, a method of getting a full period valid reference voltage output is discussed and experimental results are provided to verify the effectiveness of the proposed structure. 展开更多
关键词 bandgap correlated double sampling low power switched capacitor
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