Metal-tip/Pr0.7Ca0.3MnO3/Pt devices possess two types of I-V hysteresis： clockwise vs counter clockwise depending on the tip materials. The criteria for categorization of these two types of devices can be simply base...Metal-tip/Pr0.7Ca0.3MnO3/Pt devices possess two types of I-V hysteresis： clockwise vs counter clockwise depending on the tip materials. The criteria for categorization of these two types of devices can be simply based on whether the Gibbs free energy of oxidation for the metal tip is lower or higher than that of PCMO, respectively. While the clockwise hysteresis can be attributed to electric field induced oxidation/reduction, the counter clockwise hysteresis can be explained by oxygen vacancy migration in an electrical field. Alternating-current conductance spectra also reveal distinct hopping barriers between these two categories of devices at high resistive states.展开更多
Controlled manipulation of the electron spin by means of a microwave field is investigated. The near magnetic field generated by a copper wire antenna is measured experimentally and simulated theoretically, and the op...Controlled manipulation of the electron spin by means of a microwave field is investigated. The near magnetic field generated by a copper wire antenna is measured experimentally and simulated theoretically, and the optimum antenna length and position are obtained. By measuring the change in the fluorescence of nitrogen-vacancy （N-V） centers in diamond after excitation with a 532 nm continuous wave laser at room temperature, it is verified that the spin of the N-V center can be effectively controlled by the microwave field.展开更多
We report that fully transparent resistive random access memory （TRRAM） devices based on ITO/TiO2/ITO sandwich structure, which are prepared by the method of RF magnetron sputtering, exhibit excellent switching stab...We report that fully transparent resistive random access memory （TRRAM） devices based on ITO/TiO2/ITO sandwich structure, which are prepared by the method of RF magnetron sputtering, exhibit excellent switching stability. In the visible region （400 800 nm in wavelength） the TRRAM device has a transmittance of more than 80%. The fabricated TRRAM device shows a bipolar resistance switching behaviour at low voltage, while the retention test and rewrite cycles of more than 300,000 indicate the enhancement of switching capability. The mechanism of resistance switching is further explained by the forming and rupture processes of the filament in the TiO2 layer with the help of more oxygen vacancies which are provided by the transparent ITO electrodes.展开更多
基金Supported by the Knowledge Innovation Project of Chinese Academy of Sciences under Grant No KJCX2-SW-W26, and the National Natural Science Foundation of China under Grant Nos 90406017 and 10427402.
文摘Metal-tip/Pr0.7Ca0.3MnO3/Pt devices possess two types of I-V hysteresis： clockwise vs counter clockwise depending on the tip materials. The criteria for categorization of these two types of devices can be simply based on whether the Gibbs free energy of oxidation for the metal tip is lower or higher than that of PCMO, respectively. While the clockwise hysteresis can be attributed to electric field induced oxidation/reduction, the counter clockwise hysteresis can be explained by oxygen vacancy migration in an electrical field. Alternating-current conductance spectra also reveal distinct hopping barriers between these two categories of devices at high resistive states.
文摘Controlled manipulation of the electron spin by means of a microwave field is investigated. The near magnetic field generated by a copper wire antenna is measured experimentally and simulated theoretically, and the optimum antenna length and position are obtained. By measuring the change in the fluorescence of nitrogen-vacancy （N-V） centers in diamond after excitation with a 532 nm continuous wave laser at room temperature, it is verified that the spin of the N-V center can be effectively controlled by the microwave field.
基金Project supported by the National Basic Research Program of China (Grant No. 2007CB925002)the National High Technology Research and Development Program of China (Grant No. 2008AA031401)and Chinese Academy of Sciences
文摘We report that fully transparent resistive random access memory （TRRAM） devices based on ITO/TiO2/ITO sandwich structure, which are prepared by the method of RF magnetron sputtering, exhibit excellent switching stability. In the visible region （400 800 nm in wavelength） the TRRAM device has a transmittance of more than 80%. The fabricated TRRAM device shows a bipolar resistance switching behaviour at low voltage, while the retention test and rewrite cycles of more than 300,000 indicate the enhancement of switching capability. The mechanism of resistance switching is further explained by the forming and rupture processes of the filament in the TiO2 layer with the help of more oxygen vacancies which are provided by the transparent ITO electrodes.
