High-performance thin film lithium niobate(LN) electro-optic modulators with low cost are in demand. Based on photolithography and wet etching, we experimentally demonstrate a thin film LN Mach–Zehnder modulator with...High-performance thin film lithium niobate(LN) electro-optic modulators with low cost are in demand. Based on photolithography and wet etching, we experimentally demonstrate a thin film LN Mach–Zehnder modulator with a 3 d B bandwidth exceeding 110 GHz, which shows the potential of boosting the throughput and reducing cost. The fabricated modulator also exhibits a comparable low half-wave voltage-length product of ~2.37 V · cm, a high extinction ratio of >23 d B, and the propagation loss of optical waveguides of ~0.2 d B/cm. Besides, six-level pulse amplitude modulation up to 250 Gb/s is successfully achieved.展开更多
基金This work was supported by the National Natural Science Foundation of China(Nos.61690194 and 61911530162)。
文摘High-performance thin film lithium niobate(LN) electro-optic modulators with low cost are in demand. Based on photolithography and wet etching, we experimentally demonstrate a thin film LN Mach–Zehnder modulator with a 3 d B bandwidth exceeding 110 GHz, which shows the potential of boosting the throughput and reducing cost. The fabricated modulator also exhibits a comparable low half-wave voltage-length product of ~2.37 V · cm, a high extinction ratio of >23 d B, and the propagation loss of optical waveguides of ~0.2 d B/cm. Besides, six-level pulse amplitude modulation up to 250 Gb/s is successfully achieved.
