PANI/ZnPcCl_（16）（polyaniline doped with sulfosalicylic acid/hexadecachloro zinc phthalocyanine） powders were vacuum co-deposited onto Si substrates,where Pt interdigitated electrodes were made by micromachining.Th...PANI/ZnPcCl_（16）（polyaniline doped with sulfosalicylic acid/hexadecachloro zinc phthalocyanine） powders were vacuum co-deposited onto Si substrates,where Pt interdigitated electrodes were made by micromachining.The PANI/ZnPcCl_（16） films were characterized and analyzed by SEM,and the influencing factors on its intrinsic performance were analyzed and sensitivities of the sensors were investigated by exposure to chlorine（Cl_2） gas.The results showed that powders prepared with a stoichiometric ratio of（ZnPcCl_（16））_（0.6）（PANI）_（0.4） had a preferential sensitivity to Cl_2 gas, superior to those prepared otherwise;the optimal vacuum co-deposition conditions for the films are a substrate temperature of 160℃,an evaporation temperature of 425℃and a film thickness of 75 nm;elevating the operation temperature （above 100℃） or increasing the gas concentration（over 100 ppm） would improve the response characteristics,but there should be upper levels for each.Finally,the gas sensing mechanism of PANI/ZnPcCl_（16） films was also discussed.展开更多
Due to the difficulty in synthesizing perhalogenated metallophthalocyanine, the method of ammonium molybdate solid phase catalysis was introduced, and by using tetrachlorophthalic anhydride and urea as the raw materia...Due to the difficulty in synthesizing perhalogenated metallophthalocyanine, the method of ammonium molybdate solid phase catalysis was introduced, and by using tetrachlorophthalic anhydride and urea as the raw materials, hexadecachloro zinc phthalocyanine （ZnPcCl16） was synthesized. Components of the composite were analyzed by energy spectrum, and its functional group structures and absorption peaks were characterized by IR and UV-vis spectroscopy. The thin films of gas sensors were prepared in a vacuum evaporation system and evaporated onto SiO2 substrates, where sensing electrodes were made by MEMS micromachining. The optimal conditions for the films are： substrate temperature of 150 ℃ evaporation current of 95 A and film thickness of 50 nm. The result showed that the sensors were ideally sensitive to Cl2 gas and could detect the minimum concentration of 0.3 ppm.展开更多
Aiming at detecting Cl2 gas, this study was made on how to make In-based compound semiconductor oxide gas sensor. The micro-property and sensitivity of In-based gas sensing material were analyzed and its gas sensitive...Aiming at detecting Cl2 gas, this study was made on how to make In-based compound semiconductor oxide gas sensor. The micro-property and sensitivity of In-based gas sensing material were analyzed and its gas sensitive mechanism was also discussed. Adopting constant temperature chemical coprecipitation, the compound oxides such as In-Nb, In-Cd and In-Mg were synthesized, respectively. The products were sintered at 600 ℃ and characterized by the Scanning Electron Microscope （SEM）, showing the grain size almost about 50-60 nm. The test results show that the sensitivities of In-Nb, In-Cd and In-Mg materials under the concentration of 50 × 10^-6 in Cl2 gas are above 100 times, 4 times and 10 times, respectively. The response time of In-Nb, In-Cd and In-Mg materials is about 30, 60 and 30 s, and the recovery time less than 2, 10 and 2 min, respectively. Among them, the In-Nb material was found to have a relatively high conductivity and ideal sensitivity to Cl2 gas, which showed rather good selectivity and stability, and could detect the minimum concentration of 0.5 × 10^-6 with the sensitivity of 2.2, and the upper limit concentration of 500 × 10^-6. The power loss of the device is around 220 mW under the heating voltage of 3 V.展开更多
基金Project supported by the National Natural Science Foundation of China(Nos.60772019,50675184)the National Hi-Tech Research and Development Program of China(No.2007AA04Z308)the National Science Foundation for Post-doctoral Scientists of China(No. 20080440839).
文摘PANI/ZnPcCl_（16）（polyaniline doped with sulfosalicylic acid/hexadecachloro zinc phthalocyanine） powders were vacuum co-deposited onto Si substrates,where Pt interdigitated electrodes were made by micromachining.The PANI/ZnPcCl_（16） films were characterized and analyzed by SEM,and the influencing factors on its intrinsic performance were analyzed and sensitivities of the sensors were investigated by exposure to chlorine（Cl_2） gas.The results showed that powders prepared with a stoichiometric ratio of（ZnPcCl_（16））_（0.6）（PANI）_（0.4） had a preferential sensitivity to Cl_2 gas, superior to those prepared otherwise;the optimal vacuum co-deposition conditions for the films are a substrate temperature of 160℃,an evaporation temperature of 425℃and a film thickness of 75 nm;elevating the operation temperature （above 100℃） or increasing the gas concentration（over 100 ppm） would improve the response characteristics,but there should be upper levels for each.Finally,the gas sensing mechanism of PANI/ZnPcCl_（16） films was also discussed.
基金supported by the National Natural Science Foundation of China (No. 60772019)the National High Technology Research andDevelopment program of China (No. 2006AA040101-05)the National Science Foundation for Post-Doctoral Scientists of China (No.20080440839).
文摘Due to the difficulty in synthesizing perhalogenated metallophthalocyanine, the method of ammonium molybdate solid phase catalysis was introduced, and by using tetrachlorophthalic anhydride and urea as the raw materials, hexadecachloro zinc phthalocyanine （ZnPcCl16） was synthesized. Components of the composite were analyzed by energy spectrum, and its functional group structures and absorption peaks were characterized by IR and UV-vis spectroscopy. The thin films of gas sensors were prepared in a vacuum evaporation system and evaporated onto SiO2 substrates, where sensing electrodes were made by MEMS micromachining. The optimal conditions for the films are： substrate temperature of 150 ℃ evaporation current of 95 A and film thickness of 50 nm. The result showed that the sensors were ideally sensitive to Cl2 gas and could detect the minimum concentration of 0.3 ppm.
基金supported by the National Natural Science Foundation of China (No. 60772019)the National High Technology Research andDevelopment Program of China (No. 2006AA040101-05)the National Science Foundation for Post-doctoral Scientists of China (No.20080440839).
文摘Aiming at detecting Cl2 gas, this study was made on how to make In-based compound semiconductor oxide gas sensor. The micro-property and sensitivity of In-based gas sensing material were analyzed and its gas sensitive mechanism was also discussed. Adopting constant temperature chemical coprecipitation, the compound oxides such as In-Nb, In-Cd and In-Mg were synthesized, respectively. The products were sintered at 600 ℃ and characterized by the Scanning Electron Microscope （SEM）, showing the grain size almost about 50-60 nm. The test results show that the sensitivities of In-Nb, In-Cd and In-Mg materials under the concentration of 50 × 10^-6 in Cl2 gas are above 100 times, 4 times and 10 times, respectively. The response time of In-Nb, In-Cd and In-Mg materials is about 30, 60 and 30 s, and the recovery time less than 2, 10 and 2 min, respectively. Among them, the In-Nb material was found to have a relatively high conductivity and ideal sensitivity to Cl2 gas, which showed rather good selectivity and stability, and could detect the minimum concentration of 0.5 × 10^-6 with the sensitivity of 2.2, and the upper limit concentration of 500 × 10^-6. The power loss of the device is around 220 mW under the heating voltage of 3 V.
