This paper presents an accurate analytical model of the random telegraph signal （RTS） noise time-constant ratio （-T/-Te） for RTS noise in nano-MOSFETs, in which the Coulomb-blockade effect on trapping and detrappi...This paper presents an accurate analytical model of the random telegraph signal （RTS） noise time-constant ratio （-T/-Te） for RTS noise in nano-MOSFETs, in which the Coulomb-blockade effect on trapping and detrapping processes was taken into account. Based on this new model, the depth of the trap responsible for RTS noise in a sample n-type nano-MOSFET is extracted. The results show that large errors will be introduced to the calculated trap depth when the Coulomb-blockade effect is neglected.展开更多
文摘This paper presents an accurate analytical model of the random telegraph signal （RTS） noise time-constant ratio （-T/-Te） for RTS noise in nano-MOSFETs, in which the Coulomb-blockade effect on trapping and detrapping processes was taken into account. Based on this new model, the depth of the trap responsible for RTS noise in a sample n-type nano-MOSFET is extracted. The results show that large errors will be introduced to the calculated trap depth when the Coulomb-blockade effect is neglected.
