Uniformly distributed indium hillocks are grown on silicon substrates by dc magnetron sputtering. The morphologies and the microstructures have been investigated by scanning electron microscopy （SEM）, transmission e...Uniformly distributed indium hillocks are grown on silicon substrates by dc magnetron sputtering. The morphologies and the microstructures have been investigated by scanning electron microscopy （SEM）, transmission electron microscopy （TEM） and x-ray diffraction （XRD）. From the TEM and SEM images, we find that, at the earlier stage, the grain coalescent process dominates. This coalescent process induces a larger compressive stress. We believe that the drive force for hillock growth comes from this compressive stress. Under this compressive stress, the grain locating in the middle of several grains are extruded from these grains, and then a hillock forms with the increasing deposition time. For low melting point and high diffusion coefficient metal, such as bismuth and indium, this spontaneous-hillock growth mechanism can be used to fabricate well aligned nanostructures.展开更多
The temperature dependences of the positron annihilation lifetime and the Doppler broadening shape parameters have been measured in high Tc superconductors YBa_(2)Cu_(3)O_(7-x)=between 77.2 and 300K.The measured param...The temperature dependences of the positron annihilation lifetime and the Doppler broadening shape parameters have been measured in high Tc superconductors YBa_(2)Cu_(3)O_(7-x)=between 77.2 and 300K.The measured parameters show an abrupt change across the range of superconducting transition temperature,indicating a change of the electronic structure.The structural instabilities have also been observed in three higher temperature ranges of115-135,150-210 and 250-280K.This suggests that higher Tc superconductors might be found in these temperature ranges.展开更多
Indium nanorods are grown on silicon substrates by using magnetron-sputtering technique. Film morphologies and nanorod microstructure are investigated by using scanning electron microscopy, high-resolution transmissio...Indium nanorods are grown on silicon substrates by using magnetron-sputtering technique. Film morphologies and nanorod microstructure are investigated by using scanning electron microscopy, high-resolution transmission electron microscopy （HRTEM）, and x-ray diffraction. It is found that the mean diameter of the nanorods ranges from 30nm to 100nm and the height ranges from 30nm to 200nm. The HRTEM investigations show that the indium nanorods are single crystals and grow along the [100] axis. The nanorods grow from the facets near the surface undulation that is caused by compressive stress in the indium grains generated during grain coalescence process. For low melting point and high diffusivity metal, such as bismuth and indium, this spontaneous nanorod growth mechanism can be used to fabricate nanostructures.展开更多
The heavy ion irradiation is used for the first time to simulate the radiation damage produced by reactor neutrons in home-made modified stainless steels. The produced radiation damage is investigated by the positron ...The heavy ion irradiation is used for the first time to simulate the radiation damage produced by reactor neutrons in home-made modified stainless steels. The produced radiation damage is investigated by the positron annihilation spectroscopy. No detectable radiation damage is observed in the home-made modified stainless steels irradiated by 81.6 MeV carbon ions to a total dose of 3.3×1016 cm-2 , indicating that the home-made modified stainless steel of this type has good radiation resistant properties.展开更多
This paper proposes two viable computing strategies for distributed parallel systems: domain division with sub-domain overlapping and asynchronous communication. We have implemented a parallel computing procedure for ...This paper proposes two viable computing strategies for distributed parallel systems: domain division with sub-domain overlapping and asynchronous communication. We have implemented a parallel computing procedure for simulation of Ti thin film growing process of a system with 1000 x 1000 atoms by means of the Monte Carlo (MC) method. This approach greatly reduces the computation time for simulation of large-scale thin film growth under realistic deposition rates. The multi-lattice MC model of deposition comprises two basic events: deposition, and surface diffusion. Since diffusion constitutes more than 90% of the total simulation time of the whole deposition process at high temperature, we concentrated on implementing a new parallel diffusion simulation that reduces communication time during simulation. Asynchronous communication and domain overlapping techniques are used to reduce the waiting time and communication time among parallel processors. The parallel algorithms we propose can simulate the thin film growth of a system with many more particles than before under realistic deposition rates, and can provide a more efficient means for computer simulation of thin film growth.展开更多
文摘Uniformly distributed indium hillocks are grown on silicon substrates by dc magnetron sputtering. The morphologies and the microstructures have been investigated by scanning electron microscopy （SEM）, transmission electron microscopy （TEM） and x-ray diffraction （XRD）. From the TEM and SEM images, we find that, at the earlier stage, the grain coalescent process dominates. This coalescent process induces a larger compressive stress. We believe that the drive force for hillock growth comes from this compressive stress. Under this compressive stress, the grain locating in the middle of several grains are extruded from these grains, and then a hillock forms with the increasing deposition time. For low melting point and high diffusion coefficient metal, such as bismuth and indium, this spontaneous-hillock growth mechanism can be used to fabricate well aligned nanostructures.
基金Project supported partly by International Atomic Energy Agency under contract number 5295/RB.
文摘The temperature dependences of the positron annihilation lifetime and the Doppler broadening shape parameters have been measured in high Tc superconductors YBa_(2)Cu_(3)O_(7-x)=between 77.2 and 300K.The measured parameters show an abrupt change across the range of superconducting transition temperature,indicating a change of the electronic structure.The structural instabilities have also been observed in three higher temperature ranges of115-135,150-210 and 250-280K.This suggests that higher Tc superconductors might be found in these temperature ranges.
文摘Indium nanorods are grown on silicon substrates by using magnetron-sputtering technique. Film morphologies and nanorod microstructure are investigated by using scanning electron microscopy, high-resolution transmission electron microscopy （HRTEM）, and x-ray diffraction. It is found that the mean diameter of the nanorods ranges from 30nm to 100nm and the height ranges from 30nm to 200nm. The HRTEM investigations show that the indium nanorods are single crystals and grow along the [100] axis. The nanorods grow from the facets near the surface undulation that is caused by compressive stress in the indium grains generated during grain coalescence process. For low melting point and high diffusivity metal, such as bismuth and indium, this spontaneous nanorod growth mechanism can be used to fabricate nanostructures.
文摘The heavy ion irradiation is used for the first time to simulate the radiation damage produced by reactor neutrons in home-made modified stainless steels. The produced radiation damage is investigated by the positron annihilation spectroscopy. No detectable radiation damage is observed in the home-made modified stainless steels irradiated by 81.6 MeV carbon ions to a total dose of 3.3×1016 cm-2 , indicating that the home-made modified stainless steel of this type has good radiation resistant properties.
基金The authors would like to thank the Information Network Computing Center of the National Weather Centertor their help in tull sail. This work was supported in part by 985 Basic Research Foundation of Tsinghua University (Grant No. J2001024).
文摘This paper proposes two viable computing strategies for distributed parallel systems: domain division with sub-domain overlapping and asynchronous communication. We have implemented a parallel computing procedure for simulation of Ti thin film growing process of a system with 1000 x 1000 atoms by means of the Monte Carlo (MC) method. This approach greatly reduces the computation time for simulation of large-scale thin film growth under realistic deposition rates. The multi-lattice MC model of deposition comprises two basic events: deposition, and surface diffusion. Since diffusion constitutes more than 90% of the total simulation time of the whole deposition process at high temperature, we concentrated on implementing a new parallel diffusion simulation that reduces communication time during simulation. Asynchronous communication and domain overlapping techniques are used to reduce the waiting time and communication time among parallel processors. The parallel algorithms we propose can simulate the thin film growth of a system with many more particles than before under realistic deposition rates, and can provide a more efficient means for computer simulation of thin film growth.
